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題名 | 四元銦﹣鎵﹣砷﹣磷液相磊晶法研製1.3um 埋層凸脊式雷射二極體 |
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作者 | 朱兩旺; 陳亮; | 書刊名 | 電信研究 |
卷期 | 22:4 1992.09[民81.09] |
頁次 | 頁503-514 |
分類號 | 448.552 |
關鍵詞 | 雷射二極體; 凸脊式; 液相磊晶法; |
語文 | 中文(Chinese) |
中文摘要 | 本文採直接試誤實驗法,利用Kuphal之□及□兩組函數及種子溶解技術建立四元銦﹣鎵﹣砷﹣磷飽和溶液,再以步級冷卻法以□T=5℃成長四元晶膜。而後修正濃度□和(或)□,直至晶膜對基片晶格不匹配量及激光波長合乎所求,以此反複試誤實驗法可迅速獲得正確液態組成。為配合埋層凸脊丘雷射二極體之製造而選用637℃及600℃建立四元飽和溶液。於電射製程之第一次LPE過程中依序成長InP緩衝層、四元活性層及InP保護層於InP基片上,再以照相石版術蝕出凸脊丘。於第二次LPE過程中依序成長InP上覆層及四元接觸層。再以照相石術造出接觸區,完成之雷射晶粒特性概可:起振電流(□)約36mA,線性區輸出功能可達8.5mW,在1.4□時之發光波長為1.305μm。 |
英文摘要 | Iteracion of direct experments using trial and error method was required by two Kuphal’s functions for □ and □ seed dissolution technique for □, and step-cooling method with □T=5℃ for growing □□□□films until desired lattice mismatch and PL wavelength were obtained. Such efficient growth method can be employed to accurately predict the composition of a quaternary growth solution. The growth conditions were employed for BMR laser fabrication by establishing growth solutions at 637℃ and 600℃. In first LPE step, three eptialxial films were grown. And the mesa ridge was photolithographically formed. In second LPE step, two epitaxial films were grow. And the contact stripe was photolithographically constructed. The laser performance was characterized with threshold current (□) 36 mA, output light power of 8.5mW, and emission wavelength of 1.305 μm at 1.4□. |
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