查詢結果分析
來源資料
相關文獻
- GaAs/AlGaAs Surface Emitting Laser Diode
- AlGaAs/GaAs V-Groove Channeled Substrate Buried Heterostructure Laser Diodes
- AlGaAs/GaAs V-Groove Channeled Substrate Buried Heterostructure Laser Diodes
- Gettering Effect of Praseodymium in Ga-rich or In-rich Liquid Phase Epitaxial Growth
- 砷化鎵單異質接面雷射二極體橫向模態之控制
- Fabrication of Surface Emitting Laser Diodes
- Recent Progress in Quantum Well Infrared Photodetectors and Imaging Arrays
- The Fabrication Methods of AlGaAs/ In Gap/Al GaAs Visible Laser With Transverse Junction Stripz Structure Grown By Liquid Phase Epitaxy
- Study on GaAs/AlGaAs Vertical Cavity Surface Emitting Lasers Using Metal/Semiconductor Hybrid Reflector
- A Monolithic Integration of an GaAs/AlGaAs Surface Emitting Laser Diode and a Photodetector
頁籤選單縮合
題 名 | GaAs/AlGaAs Surface Emitting Laser Diode=砷化鎵∕砷化鋁鎵表面放光雷射二極體 |
---|---|
作 者 | 易序忠; | 書刊名 | 中華工專學報 |
卷 期 | 7 1992.02[民81.02] |
頁 次 | 頁133-153 |
分類號 | 336.9 |
關鍵詞 | 表面放光; 砷化鋁鎵; 砷化鎵; 雷射二極體; |
語 文 | 英文(English) |
中文摘要 | 本論文主要是對神化鎵/神化鋁鎵系統的研製。我們成功地將表面放光 雷射二極體和光偵測器結合在單一基板上。雷射所發出的光束一邊經由45度的 反射面垂直基板表面方向射出,另一邊的雷射光束由光偵測器接收。最高輸出功 率可達22毫瓦,最低臨限電流密度是1.57仟安/公分�插A光電流對輸出功率比值 為0.32微安/毫瓦,經由另一種光偵測器的設計可提高至1微安/毫瓦。垂直共振 腔方向的輸出遠場分佈之半功率高度為8度。 |
英文摘要 | The monolithic integration of a Ga-As/AIGaAs surface emitting laserdiode and a photodetector has been achieved successfully by using one stepliquid phase epitaxial growth. The laser beam is emitted horizontally fromone side of the edge of the laser cavity turns to vertical direction through aslant metal coated reflector, the other one is directly monitored by a nearbyphotodetector. The 45° reflector can be formed by using appropriate misalignment in substrate preparation. Two integrated devices were studied:the type I device which has its laser diode and photodetector placed in thesame plane, whereas the type H device has its photoreception area of theintegrated photodetector located at the side wall of the V channel. Thehighest output power of the surface emitting laser diode achieved is 22 mWand the threshold current density can be as low as 1.57 kA/cm��. The fullwidth at half maximum of the lateral far field pattern normal to the lasercavity is 8°. The ratio between photocurrent of the detector and the outputpower of the laser diode is about 0.32 μ A/mW for type I device. This ratiocan be increased up to I μA/mW by using type II design. |
本系統中英文摘要資訊取自各篇刊載內容。