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題 名 | 半導體材料矽之試製(1)--用酸處理及浮鎔帶鈍化所得矽之純度 |
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作 者 | 陸志鴻; | 書刊名 | 材料科學 |
卷 期 | 3:3 1971.09[民60.09] |
頁 次 | 頁169-174 |
關鍵詞 | 半導體材料; 矽; 浮鎔帶鈍化; 純度; 酸處理; |
語 文 | 中文(Chinese) |
中文摘要 | 本研究試驗係用98~99% Si之工業用矽,以鹽酸與氫氟酸之混合酸處理而得99.99%以上純度之矽。將此高純度矽粉鎔鑄成矽棒,施以浮鎔帶純化 (zone refining) ,反覆多次後得純度為5~6個9之多結晶矽棒。本報告為「半導體材料矽之試製」專題研究之第一部份研究報告。 |
英文摘要 | The silicon metal powder pulverized from the 98~99% Si silicon metal lumps, with the alumina ball mill is treated with the mixed hydrochloric acid and hydrofluoric acid, following the Voo's patented acid digestion and leaching process. The purity of the silicon powder can be increased to higher than 99.99%, after repeating nine times of this treatment. This high purity silicon powder is then melted and cast into a bar in the atmosphere of the purified argon gas. The purity of this bar is then raised to 5 to 6 nines after repeated fl0atingzone refining operations. This report is the first part of the report of the research project "Study of Technology of Making the Silicon Semiconductor Material." |
本系統中英文摘要資訊取自各篇刊載內容。