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| 題 名 | 氮化鎵基金氧半高電子遷移率電晶體及積體電路的製作及特性研究=Investigation of Fabrication and Characteristics of GaN-based Metal-oxide-semiconductor High-electron Mobility Transistors and Integrated Circuits |
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| 作 者 | 李清庭; | 書刊名 | 科儀新知 |
| 卷 期 | 244 2025.09[民114.09] |
| 頁 次 | 頁34-44 |
| 專 輯 | 「化合物半導體驅動材料新革命」專題 |
| 分類號 | 448.65 |
| 關鍵詞 | 氮化鎵半導體; 電晶體; 積體電路; |
| 語 文 | 中文(Chinese) |
| 中文摘要 | 利用創新的低溫氣相冷凝系統及光電化學氧化/蝕刻系統製作高性能的空乏型及增強型氮化鎵基金氧半高速電子遷移率場效電晶體,並整合此兩種型態的電晶體完成互補式金氧半場效電晶體積體電路,並將其應於共源極反相器電路。實現以氧化鎵基系列的材料完成高功率及高頻金氧半高速電子遷移率場效電晶體開發,並將其應用於數位邏輯電路中。 |
| 英文摘要 | The novel vapor cooling condensation system and the photoelectrochemical oxidation/etching systems were used to fabricate high performance depletion mode and enhancement mode gallium nitride (GaN)-based metal-oxide-semiconductor high-electron mobility transistors (MOSHEMTs). The complementary MOSHEMT integrated circuits were fabricated by monolithically integrated the depletion mode and enhancement mode devices and applied in inverter circuits. In this work, high-power and high frequency MOSHEMTs were realized by using the GaN-based semiconductors and used in logic circuits. |
本系統中英文摘要資訊取自各篇刊載內容。