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頁籤選單縮合
題 名 | 磊晶成長砷化(鎵)銦通道層於矽基板上對高效率低耗能電晶體之應用=Epitaxial Growth of A (Ga)InAs Channel on Si Substrate for High-performance Low-power-consumption Transistor Application |
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作 者 | 游宏偉; 蘇俊榮; 張翼; | 書刊名 | 奈米通訊 |
卷 期 | 25:1 2018.03[民107.03] |
頁 次 | 頁9-16 |
分類號 | 448.552 |
關鍵詞 | 非砷化銦鎵; 砷化銦; 高速電子移動電晶體; 有機化學氣相沉積系統; 漸變緩衝層; 介面錯位差排陣列; 兩階段成長砷化銦奈米線; NInGaAs; InAs; High-electron-mobility transistor; Metalorganic chemical vapor deposition; Graded-metamorphic buffer; Interfacial misfit array formation; Two-step-growth InAs nanowire; |
語 文 | 中文(Chinese) |