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題 名 | 掃描電位顯微鏡於銅銦鎵硒薄膜分析之應用=Applications of Scanning Kelvin Probe Microscopy on the Analysis of Cu(In,Ga)Se₂ Thin Films |
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作 者 | 唐瑋鍾; 林偉聖; 張仁銓; 謝東坡; 張茂男; | 書刊名 | 科儀新知 |
卷 期 | 199 2014.06[民103.06] |
頁 次 | 頁57-65 |
分類號 | 468.1 |
關鍵詞 | 元件短路電流; 太陽能電池; 銅銦鎵硒薄膜; 掃描電位顯微鏡; |
語 文 | 中文(Chinese) |
中文摘要 | 本文介紹表面電位分析於探討影響銅銦鎵硒(CuIn_(1-x)Ga_xSe_2, CIGS)太陽能電池短路電流(short-circuit current, J_(sc))因素之應用。針對三階段共蒸鍍(three-stage co-evaporation process)成長的銅銦鎵硒薄膜,以掃描電位顯微鏡(scanning kelvin probe microscopy, SKPM)取得銅銦鎵硒薄膜的表面電位縱深分布,再搭配X光光電子能譜儀(x-ray photoelectron spectroscopy, XPS)提供的銅銦鎵硒元素縱深分布輪廓,可藉以分析表面電位變化與銅銦鎵硒薄膜能隙以及內建電場的關係,並進一步探討影響元件短路電流的因素。 |
英文摘要 | This article introduces the applications of surface potential analysis on investigating the factors influencing the short-circuit current of a CIGS solar cell. For the CIGS thin film grown by a three-stage co-evaporation process, we employed scanning Kelvin probe microscopy (SKPM) to obtain the depth distribution of the surface potential of a CIGS thin film. With the elemental depth profiles provided by X-ray photoelectron spectroscopy (XPS), one can study the relation between the surface potential variations and the energy gaps as well as the built-in electric field in a CIGS thin film. Furthermore, the factors influencing the short-circuit current of a CIGS solar cell can be studied. |
本系統中英文摘要資訊取自各篇刊載內容。