頁籤選單縮合
題 名 | 龐磁電容及負電容效應之鍺場效電晶體驗證=The Demonstration of Colossal Magneto-capacitance and "Negative" Capacitance Effect with the Promising Characteristics of Jg-EOT and Transistor's Performance on Ge (100) n-FETs by the Novel Magnetic Gate Stack Scheme Design |
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作 者 | 陳品光; 連慶; 葉佳翰; 廖洺漢; | 書刊名 | 奈米通訊 |
卷 期 | 22:1 2015.03[民104.03] |
頁 次 | 頁2-7 |
分類號 | 448.552 |
關鍵詞 | 龐磁電容; 負電容; 鍺電晶體; Colossal magneto-capacitance; Negative capacitance; Ge FET; |
語 文 | 中文(Chinese) |