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題名 | 化學機械研磨製程載具膜背壓分佈的影響研究=A Study of the Effect of Back Pressure Distribution on the Carrier Film in Chemical Mechanical Polishing Process |
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作者 | 林有鎰; 羅仕鵬; 陳宗傑; Lin, Yeou-yih; Lo, Ship-peng; Chen, Tsung-chieh; |
期刊 | 德霖學報 |
出版日期 | 20110600 |
卷期 | 25 2011.06[民100.06] |
頁次 | 頁163-170 |
分類號 | 446.895 |
語文 | chi |
關鍵詞 | 化學機械研磨製程; 背壓; 有限元素模式; 應力; 不平坦度; CMP; Partial back pressure; FEM; Stress; Nonuniformity; |
中文摘要 | 本文建立一套包括晶圓承載器、載具膜、晶圓、維持環與研磨墊等五層結構之化學機械研磨製程二 維軸對稱有限元素模式,此模式之負荷形式為晶圓承載器負荷、載具膜背壓和維持環負荷。藉由改變載 具膜背壓的分佈形式,來探討載具膜背壓分佈對晶圓應力和不平坦度的影響。結果顯示載具膜全域背壓 的施加會增加晶圓表面不平坦度,而載具膜局部背壓的施加則會降低晶圓表面不平坦度。 |
英文摘要 | In this paper, a two dimensional axisymmetric quasic-static finite element model for the chemical mechanical polishing process (CMP for short) involving in five-layer structures of wafer carrier, carrier film, wafer, retaining ring and pad was established. In this model, the load forms are carrier load, partial back pressure of film and retaining ring load. Effect of distribution of back pressure on von-Mises stress and nonuniformity of wafer were investigated. The result shows the full back pressure exerting on the carrier film increases the nonuniformity on the wafer surface, but, the partial back pressure exerting on the carrier film decreases the nonuniformity on the wafer surface. |
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