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題名 | Study of Filamentary Resistive Switching Characteristics Based on Lithium-Doped ZnO Resistive Random Access Memory=氧化鋅摻鋰非揮發性電阻式記憶體之傳導機制研究 |
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作者 | 林俊成; 朱聖緣; 蔡震寰; 余安錠; | 書刊名 | 真空科技 |
卷期 | 26:4 2013.12[民102.12] |
頁次 | 頁23-30 |
專輯 | TVS-2013年會得獎論文 |
分類號 | 471.6511 |
關鍵詞 | 氧化鋅; 鋰摻雜; 燈絲傳導; 電阻式記憶體; ZnO; Li-doped; Filamentary switching; Resistive random access memory; |
語文 | 英文(English) |
中文摘要 | 本研究提出將鋰摻雜於氧化鋅薄膜中,可提升氧化鋅燈絲傳導型電阻式記憶體的高低電阻比值。藉由調變鋰的摻雜濃度,可控制氧化鋅薄膜內部的缺陷型態,進而影響形成載子傳導的燈絲數量,減小高電阻態的漏電流,藉此提升高低電阻比值。實驗結果顯示,當鋰摻雜的濃度為6 at%時,其高低電阻比值可達10^8,較純氧化鋅電阻式記憶體的高低電阻比值(10^3)高出約100000倍,對於元件的效能與可靠度提升甚鉅。再者,本研究首次將實驗所得之電壓-電流曲線,利用普爾-法蘭克傳輸模型中所闡述之缺陷常數以量化方式呈現,證明缺陷型態、數量與元件特性之間具有密切關係,提供了嶄新的突破與研究方法。 |
英文摘要 | This study describes the filamentary resistive switching behavior of the resistive random access memory (RRAM) device based on lithium (Li)-doped ZnO films fabricated via radio-frequency magnetron sputtering method. Various contents of Li dopants (0, 3, 6, and 9 at%) influence three defect types ,i.e., oxygen vacancies (V(subscript O)), Li atoms at interstitial sites (Li(subscript i)) and at Zn sites (Li(subscript Zn)), of Li-doped ZnO films for different resistance ratios. The resistance ratio reaches 10^8 due to the reduced leakage current in the high-resistance state (HRS) at 6 at% Li dopants. The dominant conduction mechanisms are explained in terms of Ohmic behavior and Poole-Frenkel (PF) emission. The coefficient r of the PF emission in the HRS is evaluated to confirm that the total number of defects in Li-doped ZnO films decreases with increasing Li content. The large resistance ratio and bistable performance of the device is suitable for memristive nonvolatile memory applications. |
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