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題名 | 氮化銦鎵量子井奈米尺度銦含量波動對發光二極體效率影響的分析=Analyzing the Influence of Nanoscale Indium Fluctuation on the Radiative Recombination Efficiency for InGaN Quantum Well LEDs |
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作者 | 楊宗叡; 吳育任; | 書刊名 | 真空科技 |
卷期 | 26:3 2013.09[民102.09] |
頁次 | 頁40-46 |
分類號 | 448.552 |
關鍵詞 | 發光二極體; 氮化銦鎵; 氮化鎵; 量子井; 銦波動; Light emitting diode; InGaN; GaN; Quantum well; Indium fluctuation; |
語文 | 中文(Chinese) |
中文摘要 | 我們探討了在多層量子井發光二極體(Multiple Quantum Wells Light Emitting Diode)中,奈米尺度的銦元素波動對元件物理特性的影響.透過原子探針斷層攝影術(Atom Probe Tomography)分析商用c-plane發光二極體並觀察銦成分的分佈.為了探討不同程度的銦波動以及不同數目的量子井所造成的影響,我們使用二維的漂移-擴散解析器(Drift-diffusion Solver),搭配極精密的離散網格進行分析,並且與實驗數據和一般正常(無銦波動)量子井模型作比較.結果顯示出銦波動對元件的內部量子效率(Internal Quantum Efficiency,IQE)、光效下降(Droop)表現、電壓-電流曲線會有顯著的影響.考慮了銦波動元件的預期表現較佳. |
英文摘要 | We report on the influence of nanoscale indium fluctuations on physical properties for multiple quantum well (QW) light emitting diodes (LEDs). A commercial grade c-plane LED was analyzed by atom probe tomography, and the indium composition distribution was extracted. The influence of the degree of fluctuation and number of quantum wells were analyzed by a two-dimensional Poisson and drift-diffusion solver with very fine mesh and compared to the experimental result and a simple normal quantum well model. The studies show that the indium fluctuation will significantly impact the device's internal quantum efficiency, droop behavior, and current-voltage curves. Including the influence of indium-fluctuation gives a better prediction of the device performance. |
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