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題名 | 矽摻雜與介面層對氮化銦鎵/氮化鎵量子井光電特性及奈米結構之影響=Influences of Silicon-Doping and Interfacial Layers on the Optical Characteristics and Nanostructures of InGaN/GaN Quantum Wells |
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作者姓名(中文) | 鄭永楨; | 書刊名 | 光學工程 |
卷期 | 89 民94.03 |
頁次 | 頁34-42 |
分類號 | 448.59 |
關鍵詞 | 氮化銦鎵/氮化鎵多重量子井; 壓電場; 量子侷限史塔克效應; 量子點; 介面層; InGaN/GaN QW; Interfacial layers; Nanostructures; Clustering; Quantum-confined Stark effect; QCSE; |
語文 | 中文(Chinese) |
中文摘要 | 本論文的第一部分,我們有系統的研究不同銦組成及矽摻雜條件下氮化銦鎵/氮化鎵多重量子井結構的光學及材料微結構特性,並提出個位能變化的模型來說明矽摻雜效應。其光學與材料的微結構分析結果顯示,矽摻雜於障層之氮化銦鎵/氮化鎵量子井樣品,有較弱的壓電場但有較多銦聚結構,因此量子侷限史塔克應較小,然而其載子侷限最強,產生近似量子點特性,使得發光強度與增益特性大為提升。 第二部皆的研究中,我們探討介面層效應在位障層摻雜的氮化銦鎵/氮化鎵多重量子井結構。研究結果顯示在兩個具有氮化銦介面層的樣品中,發光效率都大幅提升,堂別是在具無矽摻雜氮銦介面層的樣品中效果特別明顯。 |
英文摘要 | In this dissertation, we found that indium-rich clustering was the strongest in the barrier-doped sample, followed by the well-doped sample and then un-doped sample among the samples of the same average indium content. Among the samples of the same doping condition, the higher indium content led to stronger clustering behavior. Based on a thermodynamics model, it was speculated that the hetero-structure-induced strain was the strongest in the un-doped sample, followed by well-doped and then the barrier-doped samples. We also found that the stronger carrier localization in the cases of stronger clustering behaviors led to higher ASE intensities or gains. We have also compared four InGaN/GaN QW samples (un-doped wells and silicon doped barriers) of different interfacial layers in optical property and nano-structure. Compared with a standard barrier-doped QW sample the addition of the InN interfacial layers did improve the QW interface quality and hence the photon emission efficiency. |
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