查詢結果分析
相關文獻
- Binding Energy of Hydrogenic Impurity in Quantum Dots
- 自聚性量子點
- 砷化銦(鎵)量子點異質結構與量子點雷射
- 砷化銦量子點與量子點雷射
- Temperature Induced Stress of ZnSe Quantum Dots in Glass Matrix Thin Films Grown by Pulsed Laser Deposition
- AlAs/GaAs 量子點內第一型及第二型激子之束縛能及光學性質
- 半導體量子點之物理特性與元件應用
- 砷化銦量子點的光電性質
- 以金奈米粒子輔助高密度感應耦合電漿化學氣相沉積高密度鍺量子點於氧化矽基板之研究
- 採用電子束微影的近接效應來製作矽的奈米線結構
頁籤選單縮合
題名 | Temperature Induced Stress of ZnSe Quantum Dots in Glass Matrix Thin Films Grown by Pulsed Laser Deposition |
---|---|
作者姓名(外文) | Jan,Ja-chin; Kuo,Shou-yi; Yin,Sun-bin; Hsieh,Wen-feng; | 書刊名 | Chinese Journal of Physics |
卷期 | 39:1 2001.02[民90.02] |
頁次 | 頁90-97 |
分類號 | 337.472 |
關鍵詞 | 量子點; |
語文 | 英文(English) |
英文摘要 | By analyzing the temperature dependent spectral shifts and broadenings of both photoluminescence (PL) and Raman modes from the ZnSe-doped glass thin films grown by pulsed laser deposition, we found that temperature induced stress causes excess shifts of the PL emission bands to higher energies when the samples were kept below 100K. The compressed stress may be a result of the different thermal expansion of the ZnSe nanocrystal and the glass matrix; it is further confirmed by the temperature dependent excess Raman shift in this quantum dot sample as compared with the crystal data in the high-pressure experiment. In addition, we found the activation energies of the nonradiative decay channels associated with the edge-emission and deep-level bands are close to 1TO and 1LO of ZnSe phonon energies. |
本系統之摘要資訊系依該期刊論文摘要之資訊為主。