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頁籤選單縮合
題 名 | 二硫化鉬發展現況=Recent Development of Molybdenum Disulphide |
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作 者 | 蘇庭鋐; 林祐仲; | 書刊名 | 真空科技 |
卷 期 | 26:2 2013.06[民102.06] |
頁 次 | 頁6-11 |
分類號 | 440.34 |
關鍵詞 | 二維材料; 鉬化合物; 半導體成長; 半導體材料; 薄膜; Two-dimensional materials; Molybdenum compounds; Semiconductor growth; Semiconductor materials; Thin films; |
語 文 | 中文(Chinese) |
中文摘要 | 製作石墨烯技術的進步使二維材料的物理特性逐漸受到各界注意,二硫化鉬結構類似石墨烯容易形成二維結構,不過二硫化鉬具有能隙因此被學術界認為是一個具有開發潛力的材料。本文主要回顧近幾年二硫化鉬的發展和應用並介紹各種成長二硫化鉬的方法。當二硫化鉬結構屬於塊材形態時具有約1.2 eV的間接能隙,不過具單層形態之二硫化鉬則具有約1.8 eV的直接能隙,因此在應用上產生的結果也會有所不同,以往二硫化鉬大多應用於潤滑油,不過近幾年來已有許多研究團隊將其應用於氣體感測器、鋰離子電池、場效電晶體及染料敏化太陽電池等元件上。 |
英文摘要 | Two-dimensional materials are known, such as graphene and molybdenum disulfide (MoS2). Although graphene shows promise with its high electron mobility and compatibility with planar processing technique, lack of pristine band gap inhibits its use in logic application. As an analogue of graphene, single-layer MoS2 enjoys its semiconductor-like band gap while sharing the same two-dimensional structure compared with graphene. Recently, layered MoS2, a newly emerging semiconductor, has attracted increasing attention in the research community due to its intriguing electrical and optical properties. MoS2 exhibits direct bandgap (~1.8 eV) in its monolayer and indirect bandgap (~1.2 eV) in multilayer/bulk form, respectively. A variety of growth techniques have been used for the preparation of MoS2. MoS2 is a potential material for application in lithium ion batteries, gas sensors, field-effect transistors and dye-sensitized solar cells. |
本系統中英文摘要資訊取自各篇刊載內容。