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題名 | 原子層沉積技術製作氧化鋁膜於薄膜電晶體之應用=Atomic Layer Deposited Al₂O₃ for Thin Film Transistor Applications |
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作 者 | 洪瑞華; 吳秉叡; 賴宜楓; 武東星; | 書刊名 | 真空科技 |
卷期 | 26:1 2013.03[民102.03] |
頁次 | 頁34-44 |
分類號 | 448.552 |
關鍵詞 | 氧化鋁; 原子層沉積; 薄膜電晶體; 閘極介電層; Aluminum oxide; Atomic layer deposition; Thin film transistors; Gate insulator; |
語文 | 中文(Chinese) |
中文摘要 | 本研究探討以原子層沉積技術(Atomic Layer Deposition, ALD) 技術,於低溫(<400°C) 環境下鍍製氧化鋁(Al2O3) 薄膜,並應用於薄膜電晶體液晶顯示器(Thin Film Transistor Liquid Crystal Display, TFT-LCD) 元件之閘極介電層(Gate Insulator, GI)。Al2O3 薄膜的高介電常數特性是發展高解析度TFT-LCD 閘極介電層材料的未來趨勢。ALD 特有的自我侷限成膜機制,其所沉積之薄膜,不僅具有均勻性佳、緻密度高與極佳的階梯覆蓋率等優點,而ALD 分批進料的特殊製程,可精確且簡易的控制沉積薄膜厚度,以及反應物使用率高等特性,皆是傳統CVD 或PVD 製程技術難以突破的門檻。綜合高介電常數的Al2O3 薄膜與ALD 的製程技術,由ALD 所沉積之Al2O3 薄膜更適於應用在日後TFT 元件尺寸縮小與薄化時的GI 層製作。透過材料分析驗證,吾人證實了以ALD 成長之Al2O3 薄膜具有良好的階梯覆蓋率、表面平整度、高阻水氣透過率⋯等特性。本研究也嘗試將該Al2O3 薄膜用於TFT 元件GI 層應用上,電晶體特性Ion/Ioff 比例約為200,Vth 約為10V,且線性區mobility ~ 2.3cm2/V·s。 |
英文摘要 | Atomic layer deposition (ALD) is a novel thin film technology with a highly competitive for semiconductor fabrication. The advantages of ALD are that it is a low temperature thin film technique, has no plasma damage, no gas-phase reaction, and high precursor utilization. Because of its self-limiting surface chemistry reaction, ALD usually offers a precise control in the film thickness and composition with almost excellent uniformity and step coverage. ALD is applied for fabricating high permittivity gate insulator (GI), such as Al2O3, for thin film transistors due to its benefits. In this study, thin film transistors have been fabricated low temperature (<400°C) Al2O3 as a GI-layer material grown by ALD.For Al2O3 deposition, ALD was carried out by repeating the cycle of trimethylaluminum (Al(CH3)3, TMA) adsorption and oxidation by pure water (H2O) at 100°C and 300°C. In order to better understand the quality of deposited Al2O3, samples are characteristic by n & k analyzer, atomic force microscopy (AFM), water vapor transmission rates (WVTR), and scanning electron microscopy (SEM).After characterization, good step coverage of ALD is observed by SEM cross-section image for Al2O3 films deposited at 100°C. AFM images reveal well surface roughness for samples with different process cycles from 200 to 1000 cycles. Finally, our TFT device containing ALD deposited Al2O3 GI-layer is operated with a threshold voltage and on/off ratio of 10V and 200, respectively. Furthermore, the saturation mobility is ~ 2.3 cm^2/V·s in this device. |
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