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題名 | ONO側壁與CESL對MOSFET通道應力影響之分析=The Effect of ONO Spacer and CESL on the Channel Stress of MOSFET Devices |
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作 者 | 楊煌偉; 鄧榮皓; 蔡旻琦; 屠名正; 劉傳璽; | 書刊名 | 真空科技 |
卷期 | 25:3 2012.09[民101.09] |
頁次 | 頁22-27 |
分類號 | 448.552 |
關鍵詞 | 二氧化矽/氮化矽/二氧化矽; 側壁; 應力; 接觸窗蝕刻停止層; Oxide-Nitride-Oxide; Spacer; Stress; CESL; Contact etch stop layer; |
語文 | 中文(Chinese) |
中文摘要 | 金氧半場效電晶體(MOSFET)的微縮可以提升元件性能,但隨著特定技術的限制與材料的物理極限,使得微縮愈來愈困難,因此使用改變材料的特性,讓元件通道產生應力的研究已經受到許多重視。本實驗除了使用氮化矽接觸窗蝕刻停止層(CESL)外,並加入氮化矽層在傳統上使用的二氧化矽側壁層,形成二氧化矽/氮化矽/二氧化矽(ONO)的複合式側壁。文中探討產生張應力或壓縮應力的CESL層、ONO複合側壁層中不同厚度的氮化矽層,對通道中應力的影響。模擬結果顯示,使用CESL層以及ONO複合式側壁,可明顯地增加電晶體通道中的應力,進而提升元件特性。 |
英文摘要 | Dimension scaling of metal-oxide-semiconductor field-effect transistor (MOSFET) is known to improve device performance, but the scaling becomes more and more difficult due to the limitation of certain technologies and/or the physical limits of materials. To induce stress in the device channel through changing the characteristics of materials has begun to attract attention. In this study, in addition to SiN contact etch stop layer (CESL), oxide/nitride/oxide (ONO) spacer has been adopted by inserting a nitride layer into the traditional oxide spacer layer. This article has investigated the impact of CESL and nitride spacer thickness of ONO spacer on the channel stress of MOSFET devices. Simulation results have shown that the channel stress, and therefore device performance, can be significantly enhanced through the use of CESL and ONO spacer. |
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