查詢結果分析
相關文獻
- 低電壓0.13微米互補式金氧半導體電壓控制振盪器與倍頻器
- 低電壓應力順向電力轉換器
- The New Full-swing Low-voltage Dynamic Logic Gate
- Large Signal Analysis of Low-Voltage BiMOS Analog Multipliers Using Fourier-Series Approximations
- On the Implementation of a Very Low-Spurious Si-Bipolar Frequency Multiplier
- 交流低電壓標準器之交直流差量測
- Design of High Performance Three-input XOR/XNOR Circuit
- 3∼18GHz倍頻器模組之研製
- 低電壓CMOS鎖相迴路於脈波產生器之設計研究
- The Design of a Standard Cell Library for Low-power/Low-voltage VLSI Applications
頁籤選單縮合
題名 | 低電壓0.13微米互補式金氧半導體電壓控制振盪器與倍頻器=Low Voltage 0.13-μm CMOS Voltage-Controlled Oscillator and Frequency Doubler |
---|---|
作者 | 楊清淵; 張智翔; | 書刊名 | 興大工程學刊 |
卷期 | 21:1 2010.03[民99.03] |
頁次 | 頁46-53 |
分類號 | 448.532 |
關鍵詞 | 低電壓; 正交壓控振盪器; 倍頻器; Low-voltage; Quadracture voltage-controlled oscillator; QVCO; Frequency doubler; |
語文 | 中文(Chinese) |
中文摘要 | 本篇論文描述現實低電壓及高頻率的正交電壓控制振盪及二倍頻電路。在0.5伏特的低電壓操作,可提供8.8到9.2 GHz的可調頻率範圍(4.7%),電路本身所消耗功率爲7.2毫瓦。當二倍頻電路操作在9.1 GHz的頻率時,其相對的相位雜訊在1 MHz偏移處爲-107 dBc/Hz;同時,所對應的正交電壓控制振盪之輸出信號雜訊為-124 dBc/Hz在1 MHz 偏移處。 |
英文摘要 | The paper addresses the design and realization of a quadracture voltage-controlled oscillator (QVCO) and a frequency doubling regenerator. Operating from a 0.5-V supply, the proposed circuits provide the tuning range of 8.8 to 9.2 GHz and dissipate below 7.2 mW. At 9.1-GHz carried frequency with doubling-frequency operation, the measured phase noise is-107 dBc/Hz at a 1-MHz offset. Simultaneously, the fundamental frequency output by the QVCO provides the phase noise of-124 dBc/Hz at a 1-MHz offset. |
本系統之摘要資訊系依該期刊論文摘要之資訊為主。