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題名 | Efficiency Improvement of GaAs Solar Cells by Micro-Hole Array Surface Texture Process=利用微孔陣列表面結構製程提升砷化鎵太陽電池效率 |
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作者姓名(中文) | 曾鈺仁; 洪榮木; 賴利溫; 賴利弘; 郭浩中; | 書刊名 | 清雲學報 |
卷期 | 30:1 2010.01[民99.01] |
頁次 | 頁27-37 |
分類號 | 468.1 |
關鍵詞 | 砷化鎵; 太陽電池; 微孔陣列; 轉換效率; GaAs; Solar cells; Micro-hole array; Conversion efficiency; |
語文 | 英文(English) |
中文摘要 | 本文以一種新型微孔陣列表面結構製程,製造砷化鎵太陽能電池來進行研究。探討在有沒 有微孔陣列表面結構的影響下,其砷化鎵太陽能電池的特性。利用微孔陣列表面結構製程所做 出來的單接面InGaP 太陽能電池,發現其短路電流增加了 10.4 %。當微孔尺寸由5.3μm 修正為 5 μm 其轉換效率由原先的13.8% 提升至 15.9%,而轉換效率的量測是在室溫AM1.5G 標準光源 下,所進行量測的。 |
英文摘要 | A GaAs solar cells fabricated by a novel micro-hole array surface texture process were investigated in this paper. The characteristics of the GaAs solar cells with and without the micro-hole array surface texture are studied. An increase of 10.4% in short-circuit current is found when the single-junction InGaP solar cell is fabricated by the micro-hole array surface texture process. The conversion efficiency measured under one-sun air-mass 1.5 global illumination at room temperature can also be improved from 13.8% to 15.9% when the size of the micro-holes is 5.3 μm and the period of micro-hole array is designed to 5 μm. |
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