查詢結果分析
來源資料
相關文獻
- 氣壓對YSZ薄膜成長特性之影響
- 加熱器熱交換管材Monel 400合金之高溫應力腐蝕案例分析
- The Relationships between the Crack-tip Stress Fields and the CreepCrack Growth Rates
- 壓克力漿料性質之評估
- 敏化304不銹鋼在高溫純水環境中應力腐蝕電化學雜訊反應
- 沸水式反應器爐心內部組件之龜裂問題與評估
- 高張力鋼銲接元件之裂縫成長行為
- 汽機葉片之機械力學分析研究
- Layer Reduction Technique in the Interlaminar Shear Stress Analysis of Laminated Cylindrical Shells
- 傳統撓度指標法則於柔性鋪面之應用
頁籤選單縮合
題 名 | 氣壓對YSZ薄膜成長特性之影響=The Growth and Properties of YSZ Thin Films |
---|---|
作 者 | 黃宏欣; 黃家城; 劉源興; 周建廷; | 書刊名 | 正修學報 |
卷 期 | 20 2007.11[民96.11] |
頁 次 | 頁121-129 |
分類號 | 448.57 |
關鍵詞 | 電子束蒸鍍; YSZ薄膜; 織構係數; 應力; Electron beam evaporation; Strain; Texture coefficient; YSZ thin film; |
語 文 | 中文(Chinese) |
中文摘要 | 本研究使用電子束蒸鍍法沉積氧化釔安定氧化鋯(Yttria-stabilized Zirconia, YSZ)薄膜。探討沉積溫度在200°C時,不同氧氣壓力時薄膜之結構、表面型態及透光率之分析。由XRD的結果顯示可知,薄膜成長方向是以(111)、(200)、(220)、(311)及(400)等面爲主要繞射峰。並計算各繞射面的織構係數來分析薄膜之優選方向,結果顯示在低氧氣壓力下,所得薄膜以<200>爲優選方向,當氧氣壓力大於1×10^(-4)Torr時,其優選方向轉變爲<111>。由晶粒尺寸的計算結果顯示,晶粒尺寸隨著氧氣壓力增加而減少,在5×10^(-4)Torr時有最小值約11 nm。由薄膜應變計算結果可得知,薄膜內應變隨著氧氣壓力的降低而變小。以SEM進行薄膜表面觀察得知,在低氧氣壓力下,薄膜表面較爲平坦,當氧氣壓力升高時,顯示晶粒聚集的現象。 |
英文摘要 | Effects of oxygen pressure on structure and morphology of Yttria-stabilized Zirconia (YSZ) film prepared by electron beam evaporation are investigated. According to X-ray diffraction (XRD), Bragg peaks of (111), (200), (220) and (311) of YSZ thin film are found. Analysis by texture coefficient shows that the <200> is the preferred orientation at low oxygen pressure, whereas <111> preferred orientation is seen when the oxygen pressure is larger than 1×10^(-4)Torr. The grain size of YSZ film increases with oxygen pressure, and the grain size is about 11 nm at 5×10^(-4)Torr. The strain of film decreases with increasing oxygen pressure. Morphology observation by scanning electron microscope shows that rough surface is obtained when deposited at high oxygen pressure. Morphology observation further shows that smooth surface is obtained when deposited at low O2 pressure. |
本系統中英文摘要資訊取自各篇刊載內容。