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題名 | A Novel Stack Structure to Improve the Effect of W-Polycide Gate on MOS Device Degradation with Un-doped α-Si/Heavy-Doped Poly-Si MultiLayer=有效抑止氟離子擴散的新型堆疊複晶矽結構 |
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作者 | 陳啟文; Chen, Chii-wen; |
期刊 | 明新學報 |
出版日期 | 19960600 |
卷期 | 16 民85.06 |
頁次 | 頁87-92 |
分類號 | 448.57 |
語文 | eng |
關鍵詞 | 氟; 介面能態; 鎢複晶矽; 氮氧化物; 電荷幫浦注入; Fluorine; Interface state; Tungsten polycide; α-Si layer; |