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題名 | Fluorine-induced Interface States in W-polycide MOS Devices with Nitrided Oxide Gate Dielectric=在具有氮氧化物介電層閘極的鎢複晶矽金氧半元件中由氟離子引起的介面能態之研究 |
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作 者 | 陳啟文; | 書刊名 | 明新學報 |
卷期 | 15 民84.12 |
頁次 | 頁57-62 |
分類號 | 448.552 |
關鍵詞 | 氟; 介面能態; 鎢複晶矽; 氮氧化物; 電荷幫浦注入; Fluorine; Interface state; Tungsten polycide; Oxynitride; Charge pumping; |
語文 | 英文(English) |