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題 名 | Impact on W-Polycide Gated MOSFET with NO or ONO Gate Dielectric under Hot-Carrier Stress=具有氮氧化物介電層及鎢矽閘極的金氧半場效電晶體在熱載子應力下之影響 |
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作 者 | 陳啟文; | 書刊名 | 明新學報 |
卷 期 | 17 民85.11 |
頁 次 | 頁25-35 |
分類號 | 448.552 |
關鍵詞 | 金氧半場效電晶體; 鎢矽化合物; 經過再氧化的氮氧化物; 快速加熱退火; 氟離子; 熱載子效應; MOSFET; W-polycide; Reoxidized-oxynitride; RTA; Fluorine; Hot-carrier effect; |
語 文 | 英文(English) |