頁籤選單縮合
題名 | 高亮度照明GaN-Based LED封裝趨勢與挑戰=Challenges for High-Power LED Packaging |
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作者 | 劉正毓; | 書刊名 | 光學工程 |
卷期 | 90 民94.06 |
頁次 | 頁60-64 |
分類號 | 448.59 |
關鍵詞 | LED封裝; LED packaging; |
語文 | 中文(Chinese) |
中文摘要 | 本文將就LED封裝作一介紹,同時針對GaN磊晶層轉移的技術就兩點作說明:(1)晶圓鍵合及雷射剝離的技術LLO完後GaN磊晶層之熱應力(thermal stress);(2)Wafer bonding及LLO製程溫度對於GaN-based磊晶層上各金屬層的影響。 |
英文摘要 | In this paper, the LED packaging technologies will be overviewed. Besides, using the wafer bonding and LLO (Laser Lift-Off) to separate the GaN epi-layer will be discussed in the following two points: (1)Effect of thermal stress on LLO process (2)Effect of wafer bonding and LLO processes on the properties of metal contacts. |
本系統之摘要資訊系依該期刊論文摘要之資訊為主。