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題名 | XeF準分子雷射退火之低溫多晶矽薄膜再結晶特性研究與分析=Characteristic Analysis of Low Temperature Polycrystalline Silicon Thin Films Prepared by XeF Excimer Laser Annealing |
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作者 | 郭啟全; 葉文昌; 鄭正元; 陳佳斌; | 書刊名 | 明志學報 |
卷期 | 37:2 民95.01 |
頁次 | 頁17-23 |
分類號 | 448.57 |
關鍵詞 | XeF準分子雷射退火; 相變化; 表面形貌; XeF excimer laser annealing; Phase transformation; Surface morphology; |
語文 | 中文(Chinese) |
中文摘要 | 本研究針對900A厚之非晶矽薄膜,於XeF準分子雷射(λ=351nm,pulse duration=25ns,frequency=1Hz)退火期間之矽薄膜相變化特性之探討,並藉由AFM原子力顯微鏡觀察退火後多晶矽薄膜之表面形貌,研究結果發現,於矽膜近乎全熔時,矽薄膜之表面粗糙度RMS達最大值;當矽膜達到全熔時。矽薄膜之表面粗操度又下降。此結果與運用FE-SEM觀察之晶粒大小分佈趨勢以及運用線上光學診斷技術於矽薄膜相變化機制之分析結果相符合。 |
英文摘要 | XeF excimer laser-induced melting and recrystallization of 900A thick amorphous silicon is investigated using robust in-situ time-resolved optical reflection and transmission measurements (TRORT) with nanosecond time resolution. Three distinct regrowth regimes are found using various excimer laser fluences. These phase transformations are consistent with the recrystallized polycrystalline silicon morphologies. The correlation between surface roughness and grain size is also determined. The microstructure analysis of the irradiated region is studied with field emisson scanning electron microscopy, Raman spectroscopy and atomic force microscopy. |
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