頁籤選單縮合
題 名 | 氧化鋅奈米柱之成長與特性分析 |
---|---|
作 者 | 吳季珍; 劉思呈; 古鎮豪; 溫慧怡; 楊明勳; 姜雪涵; | 書刊名 | 臺灣奈米會刊 |
卷 期 | 2 民94.07 |
頁 次 | 頁5-15 |
專 輯 | 化工與材料 |
分類號 | 440.34 |
關鍵詞 | 氧化鋅奈米柱; |
語 文 | 中文(Chinese) |
中文摘要 | 本研究以化學氣相沉積法在無觸媒存在下成功地於個種基板上成長高方向性的氧化鋅奈米柱。結構分析顯示,氧化鋅奈米柱可以磊晶成長於sapphire(110)基板沉積。由室溫放射光譜可知,此氧化鋅奈米柱於波長386nm處有一非常強的近band-edge的放射峰,而與氧化鋅晶格中的氧究缺有關於550nm處之放射,則相對幾乎可忽略。而本研究亦發現,高方向性氧化鋅奈米柱的長徑比可藉由氫氣後處理的方式來調節。此外,我們也以化學氣相沉積法成長Z□M□O與Z□C□O奈米柱。結構分析顯示,Z□M□O奈米柱之c軸晶格常數乃隨著鎂含量增加而降低,Z□C□O奈米柱則反之。室溫放射光譜分析得知,Z□M□O奈米柱的近band-edge放射的UV放射峰波長隨著鎂含量x的增加而有藍位移之現象。而Z□C□O奈米柱於350K時仍維持鐵磁特性,顯示本研究成功地以化學氣相沉積法in-situ成長稀釋型鐵磁性半導體Z□C□O奈米柱。 |
英文摘要 | Highly oriented ZnO nanorods have been grown on various substrates, such as fused silica, Si(100) and sapphire (110), using a simple catalyst-free CVD method at low temperatures. TEM analyses indicate that eptiaxial ZnO nanorods have been grown on sapphire (110). The well-aligned ZnO nanorods on fused silica substrates exhibit a stron uv emission and absorption at around 386 nm under room temperature. Photoluminescence spectrum indicates that there is a very low concentration of oxygen vacancies in the highly oriented ZnO nanorods. Diameter control of the well-oriented and high-quality ZnO nanorods iss achievable by hydrogen post-treatment. Well-aligned Z□M□O and Z□C□O nanorods have also been grown on various substrates using MOCVD. The c-axis constant of the Z□□O nanorod decreases with increasing Mg and decreasing Co contents. The PL emission energies of the Z□M□O nanords measured at room temperture increase nomotonically with the Mg contents. However, the fundamental absorptions of the Z□C□O nanorods estimated from the absorption spectra do not reveal pronounced difference from that of pure ZnO nanorods. Furthermore, the Z□C□O manorods have been determined to possess a Curie temperature higher than 350 K, indicating room-temperature diluted magnetic semiconductor Z□C□O nanorods have been synthesized by in-situ doping of Co in ZnO nanorods. |
本系統中英文摘要資訊取自各篇刊載內容。