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頁籤選單縮合
題名 | 氧化釩熱阻型微感測器之特性研究=Investigated the Performance of VOx Microbolometers |
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作者 | 楊叢原; 吳嘉玲; 李欣縈; 湯相峰; 林文仁; Yang, Tsung-yuan; Wu, Chia-ling; Lee, Hsin-ying; Tang, Shiang-feng; Lin, Wen-jen; |
期刊 | 真空科技 |
出版日期 | 20131200 |
卷期 | 26:4 2013.12[民102.12] |
頁次 | 頁37-43 |
分類號 | 448.5 |
語文 | chi |
關鍵詞 | 懸浮式熱阻型感測器; 響應度; 電阻溫度係數; 熱時間常數; 熱導及氧化釩薄膜; Magnetron radio frequency sputtering system; Temperature coefficient of resistivity; Vanadium oxide; |
中文摘要 | 本研究為氧化釩懸浮式熱阻型微感測器的特性研究,對溫度極為敏感氧化釩(VOx)薄膜具有高的電阻溫度係數(Temperature Coefficient of Resistivity,TCR),其為目前被廣泛研究的熱敏材料之一,並為了改善熱由矽基板散逸的問題,因此以體型蝕刻技術蝕刻矽基板,用以製作高性能之懸浮式微感測器元件。本研究中將以射頻磁控式濺鍍系統製備氧化釩薄膜,其中探討以不同的溫度熱處理之薄膜性質,利用可變溫之四點探針量測其片電阻並計算電阻溫度係數,並以原子力顯微鏡(AFM)觀察薄膜表面形貌,藉由X光繞射分析儀(XRD)分析薄膜的結晶相與結晶品質。在體型蝕刻部份,以氫氧化四甲基銨(Tetramethylammonium Hydroxide,TMAH)蝕刻(100)p-型矽晶圓,其中探討以不同的蝕刻條件如溫度及蝕刻時間對矽晶圓影響。最後完成氧化釩懸浮式熱阻型微感測器製作,且通入定電流0.03 μA時可得到元件在常壓下熱時間常數、響應度及熱導分別為38.8 ms、635 KV/W 和2.1×10^(-8) W/K。 |
英文摘要 | In this study, the performances of the vanadium oxide (VOx) with high temperature coefficient of resistivity (TCR) floating-type microbolometers were investigated. The VOx material is one of the thermo-sensitive materials and has attracted much attention. To solve the question of the thermal loss from the Si substrates and to improve the performance of the VOx floating-type microbolometers, the bulk micromachining technique was utilized to etch the Si substrate to form fl oating structure.In this work, the VOx films were deposited using magnetron radio frequency sputtering system. The thermal treatments with various temperatures were also utilized to improve the performance of the VOx films. The sheet resistance of the VOx films was carried out using the four point probe, which could estimate the TCR. The atomic force microscope (AFM) and X-ray diffraction (XRD) were used to measure the morphology and the crystallization of the VOx films, respectively. In the bulk micromachining etching process, the Tetramethylammonium Hydroxide (TMAH) solutions were utilized to etch the (100) p-type Si substrate, which form the floating structure on the Si substrate. Otherwise, the relationship between the performance and the etching conditions, such as various etching temperature and etching time were also investigated.Finally, the resulted VOx films and the optimize etching conditions were applied in the fabricating of the floating-type microbolometers. At fixed injection current of 0.03 μA, the thermal time constant, responsivity and thermal conductivity of the resulted VOx floating-type microbolometers were 38.8 ms, 635 KV/W and 2.1×10^(-8) W/K, respectively. |
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