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題名 | The Fabrication of High-Speed and High-Power InGaAs/GaAs Field-Effect Transistors Grown by MOCVD=以MOCVD技術製作高速且高功率之砷化銦鎵/砷化鎵場效電晶體 |
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作者姓名(中文) | 謝和銘; 許渭州; | 書刊名 | 崑山技術學院學報 |
卷期 | 1 1998.01[民87.01] |
頁次 | 頁5-8 |
分類號 | 448.552 |
關鍵詞 | 異質結構; 場效電晶體; 二維電子雲; 平面摻雜; Heterostructure; FET; Two-dimensional electron gas; δ-doping; |
語文 | 英文(English) |
中文摘要 | 一般來說,以砷化銦鎵為通道之高功率場效電晶體均以砷化鋁鎵作為能障材料, 而不採用砷化鎵。主要的考量是因為砷化鋁鎵有較大的能隙,因而能提供較高的二維 電子雲濃度,而濃度的提高對高功率電晶體而言是非常重要的。然而,成長高品質砷 化鋁鎵的困難性與其易產生深能階複合中心等因素,在在地都限制了這種結構的發 展。而砷化鎵的磊晶就容易多了,而且其移動率也高,若能同時提高二維電子雲濃度, 則砷化銦鎵/砷化鎵就是製作高速且高功率場效電晶體的最佳組合。 本篇研究,我們採用有機金屬氣相沉積的技術成長一系列多重平面摻雜的砷化銦 鎵/砷化鎵異質結構,結果在沒有犧牲太多移動率的情況下,果然大幅提供了二維電子 雲濃度。尤其在通道兩側各一層平面摻雜的結構中,在300K(77K)時,其二維電子雲 濃度高達6.2(4.1)×10�gcm�笐插A而移動率可達4630(19100)cm��/v.s。而將它製成元件後 ,在 300K 時測得其外質轉導值為 390mS/mm,而最大的有效飽合電流高達 800mA/mm,非常 適合作為高速且高功率之場效電晶體。 |
英文摘要 | Selectively multiple-δ-doped GaAs/InGaAs/GaAs pseudomorphic heterostructures grown by low-pressure metalorganic chemical vapor deposition (LP-MOCVD) for improving two-dimensional electron gas (2DEG) concentration and mobility were demonstrated. A11 the multiple δ-doped structures revealed significantly higher 2DEG concentrations and mobility than those of single δ-doped and coventional homogeneously doped GaAs/InGaAs structures. The structure with δ-doped GaAs layers grown symmetrically on both sides of the channel showed extremely high 2DEG concentrations of 6.2(4.1)×10�gcm�笐徨nd mobility of 4630(19100) cm��/v.s at 300(70)K. Meanwhile, a peak extrinsic trans-conductance of 390 mS/mm, maximum effective saturation current density of 830 mA/mm, with broad and high transconductance region at 300KJ, were achieved in this symmetrically δ -doped GaAs structure which is very suitable to be fabricated as a high-speed and high-power filed-effect transistor. |
本系統之摘要資訊系依該期刊論文摘要之資訊為主。