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題名 | Growth of InN Films on Sapphire Substrates by Reactive Magnetron Sputtering=以反應式磁控濺鍍法於藍寶石基板上成長氮化銦薄膜 |
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作者姓名(中文) | 陳隆建; 周道煒; | 書刊名 | 臺北科技大學學報 |
卷期 | 37:2 2004.09[民93.09] |
頁次 | 頁121-125 |
分類號 | 448.59 |
關鍵詞 | 氮化銦; 藍寶石基板; 反應式磁控濺鍍; 霍爾遷移率; InN; Sapphire substrate; Reactive magnetron sputtering; Hall mobility; |
語文 | 英文(English) |
中文摘要 | 本實驗採用反應式磁控濺鍍法,於(0001)藍寶石基板上成長氮化銦薄膜,並量測其特性。從X光繞射圖樣(XRD)中,除了藍寶石基板外,另外還觀察到氮化銦(100)、(002)與(101)位向的三個繞射峰,這表示我們所成長的氮化銦薄膜為多晶結構。對300nm厚的氮化銦薄膜量測其霍爾遷移率,可發現隨著退火溫度上升,其霍爾遷移率也隨之增加,在未退火前為15.3cm2/Vs,而以400℃,60秒進行快速熱退火時霍爾遷移率達到39.4 cm2/V-s的最大值。薄膜平均成長速率約為25nm/min。 |
英文摘要 | Growth and characteristics of InN films by reactive magnetron sputtering on (0001) sapphire substrate have been studied. From X-ray diffraction (XRD) profile, three peaks from (100), (002), and (101) InN are observed except for reflection from the sapphire substrate, suggesting the obtained film is polycrystalline. The Hall mobility increases from 15.3 to 39.4 for 300nm-thick of InN when the alloy temperature is from room temperature increasing to 400℃ for 60sec by rapid thermal process (RTP). And, the deposition rate is around 25nm/min. |
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