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題名 | Effect of Band-Offset Ratio on Characteristics of 405-nm InGaN Quantum-Well Lasers=導電帶與價電帶井深比例對405-nm氮化銦鎵量子井雷射特性之影響 |
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作 者 | 劉柏挺; 郭艷光; 顏勝宏; 林正洋; | 書刊名 | 修平學報 |
卷期 | 9 2004.09[民93.09] |
頁次 | 頁53-67 |
分類號 | 336.9 |
關鍵詞 | 氮化銦鎵; 導電帶與價電帶井深比例; 量子井雷射; 臨界電流; InGaN; Band-Offset ratio; Quantum-well laser; Threshold current; |
語文 | 英文(English) |
中文摘要 | 本文以數值計算來探討導電帶與價電帶井深比例對405-nm氮化銦嫁量子井雷射特性的影響。特別是導電帶與價電帶井深比例為7/3的Inx, Ga1-xN/InyGa1-yN異質結構的光學特性。比較顯示現今大家所認同的井深比例為7/3比2002年以前一般所認同的井深比例為3/7有較佳的雷射效能及在量子井有較均勻的載子濃度分布。本文亦由模擬的結果推導出405nm雷射結構在一些特定銦含量的披覆層時,其量子井厚度與量子井銦含量的關係式,以作為設計的參考。 |
英文摘要 | The effect of band-offset ratio on the characteristics of the 405-nm InGaN quantum-well lasers is studied numerically. Specifically, the optical properties are investigated when the band-offset ratio of the InxGa1-xN/InyGa1-yN heterojunction is 7/3. Compared to a band-off-set ratio of 3/7, which was widely accepted before the year 2002, the laser performance is better and the distribution of carrier concentration in the quantum wells becomes more uniform when the band-offset ratio is 7/3, which is accepted by most researchers recently. Several formulae are derived from simulations, which can be used as a handy tool to calculate the thickness of InxGa1-xN well layer in the 405-nm laser structure for specific indium compositions of InxGa1-xN well alyer and InyGa1-yN barrier layer. |
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