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題 名 | 探討化學機械研磨之最適化製程參數=Investigations on Optimal Process Parameters in Chemical Mechanical Polishing |
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作 者 | 李建德; 林有鎰; 邱進東; | 書刊名 | 德霖學報 |
卷 期 | 24 2010.08[民99.08] |
頁 次 | 頁423-431 |
分類號 | 446.895 |
關鍵詞 | 化學機械研磨; 有限元素模式; 最佳化; 局部背壓; 維持環; CMP; Finite element model; Optimization; Local back pressure; Retaining ring; |
語 文 | 中文(Chinese) |
中文摘要 | 本文首先建立化學機械研磨製程之二維軸對稱有限元素模式,此模式包括晶圓承載器、載具 膜、晶圓、維持環與研磨墊五層結構,負荷形式為晶圓承載器負荷、載具膜局部背壓和維持環負荷。 接著,以二次搜尋最佳化演算模式找出達到晶圓表面不平坦度最小化的目標時,載具膜局部背壓、 維持環負荷、晶圓-維持環間距、研磨墊厚度和彈性係數等設計變數的最佳組合。結果發現(1)載具 膜局部背壓、維持環負荷分別為0.003448MPa 和0.89776MPa 、晶圓-維持環間距為0.0mm、研磨 墊厚度為0.738706mm、研磨墊彈性係數為2.29655MPa 時,晶圓表面最小不平坦度為0.07384;(2) 比較最佳和初始加工條件下之晶圓表面不平坦度,改善程度達到69.51%。 |
英文摘要 | In this paper, a 2D axisymmetric finite element model for chemical-mechanical polishing process (CMP) was established. In this model, the five-layer structures including carrier, carrier film, wafer, retaining ring and pad will be involved. Force forms are the carrier’s load, the local back pressure of carrier film and the load of retaining ring. Furthermore, a quadratic searching optimization algorithm model was constructed to search for the optimal design variables including back pressure of film, load of retaining ring, distance between the wafer and the ring, thickness and elastic modulus of pad in order to attain the minimization of surface nonuniformity. The results indicated that (1) under the conditions that the local back pressure of film and load of retaining ring were 0.003448MPa and 0.89776MPa, the distance between the wafer and the ring was 0.0mm, the thickness of pad was 0.738706mm and the elastic modulus of pad was 2.29655MPa, the minimum nonuniformity on the wafer surface (=0.07384) was achieved, (2) comparing the nonuniformity under the optimal and original condition, the improvement was 69.51%. |
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