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題 名 | 在鈷/鈦/矽與鈷/鎳/矽系統不同中間層對鈷矽化物生成的影響=The Effects of Different Interlayers Affect the Formation of Co Silicides in Co/Ti/Si and Co/Ni/Si Systems |
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作 者 | 郭昇鑫; 蔡哲正; | 書刊名 | 興大工程學刊 |
卷 期 | 11:1 2000.03[民89.03] |
頁 次 | 頁53-60 |
分類號 | 440.34 |
關鍵詞 | 矽化物; 表面應力; 曲率量測; Silicide; Surface stress; Curvature measurement; |
語 文 | 中文(Chinese) |
中文摘要 | 本實驗利用掃瞄式雷射測基材彎曲度系統與X光繞射的方法來探討鈷╱鈦╱矽與 鈷╱鎳╱矽系統,中間層對鈷矽化合物生成的影響。結果明顯地發現前者比後者在CoSi相 及CoSi□相生成溫度分別延緩了246℃及243℃。在鈷╱鎳╱矽系統中,於455℃發現有 Co□Si相的生成;而鈷╱鈦╱矽系統中則是直接跳過。在退火過程中,鈷╱鈦╱矽系統的 最大表面應力曲線變化相較鈷╱鎳╱矽系統來得小,其約降低了30﹪左右。在鈷╱鈦╱矽 系統,隨退火溫度上升而偵測到Co□TiO□的化合物,並在其後746℃發現有CO□Ti□Si□ 相的過渡生成。就在Si(100)基材上CoSi□(200)的方向性而言,鈷╱鈦╱矽系統較鈷╱ 鎳╱矽系統來得好。 |
英文摘要 | The effects of interlayers that affected the formation of Co silicides in the reaction systems of Co/Ti/Si(100) and Co/Ni/Si(100) were studied using a laser scanning method for substrate curvature measurements and X-ray diffraction. The results showed that the formation temperatures of CoSi and CoSi□ in the Co/Ti/Si(100) system were significantly delayed by 246℃ and 243℃ respectively when compared to those in the Co/Ni/Si(100) system. At the temperature of 455℃, the Co□Si phase was observed in the Co/Ni/Si(100) system while the phase was missing in the entire reaction sequence for the Co/Ti/Si(100) system. During the annealing process, the maximum surface stress change in the Co/Ti/Si(100) system was 30% less than that in the Co/Ni/Si(100). With the annealing temperature rising, Co□TiO□ phase was detected and Co□Ti□Si□ was also detected at a temperature of 746℃ for the Co/Ti/Si(100) system. The CoSi□ phase obtained from the system of Co/Ti/Si(100) have better directional relation of CoSi□(200) with the Si substrate than that obtained from the Co/Ni/Si(100). |
本系統中英文摘要資訊取自各篇刊載內容。