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題名 | The Effect of Ammonia Plasma Treatment on Low-k Methyl-Hybrido-Silsesquioxane (MHSQ) Against Photoresist Stripping Damage=氨電漿後續處理低介電常數材料(HOSP)以增強其抵抗於光阻去除製程中損害之研究 |
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作者姓名(中文) | 張鼎張; 蔡宗鳴; 莫亦先; 劉柏村; 梅玉貞; 施敏; | 書刊名 | 真空科技 |
卷期 | 14:2 2001.07[民90.07] |
頁次 | 頁19-26 |
分類號 | 440.34 |
關鍵詞 | 薄膜; 氨電漿; 低介電常數材料; 光阻去除製程; HOSP; |
語文 | 英文(English) |
中文摘要 | HOSP為一種有機的旋塗材料(SOG),因為其本身具有相當低的介電常數(K約為2.5),因此目前許多專家仍在評估其應用在積體電路的可能性。HOSP因為具備了相當好的填洞能力,薄膜的低應力以及其其它製程的優良整合能力。這眾多的優點顯示出,對於積體電路的應用,HOSP將是一種相當適合的材料。 然而,一些有機的旋塗材料經常在光阻去除的過程中產生許多問題,面對這些問題,我們利用氨電漿後續處理來預防HOSP薄膜在光阻去除的過程中受損害(例如:乾式的氧電漿及溼式的光阻清潔液),我們發現即使經過光阻去除的步驟,經過氨電漿處理的低介電常數薄膜,其漏電流明顯的下降且介電常數亦維持在一個相當低的數值。 當Hosp經過氨電漿處理過後,其表面形成一層很薄的氮化物(SixNx)。正因如此,造就HOSP薄膜優良的介電特性。當然材料分析及電性量測也印證了我們的說法。實驗的結果告訴我們,這層緻密,類似氮化物的薄膜覆蓋在HOSP的表面,因而在光阻去除的過程中,SiNx阻擋了氧電漿及光阻清潔液對薄膜的損害。所以,即使經過了光阻去除的製程,薄膜本身的介電性質仍維持在相當優良的狀況下。因此我們認為,使用氨電漿對薄膜實行後續處理,將是一個大有可為的方法,用以增強抵抗於光阻去除過程中薄膜劣化的能力。 |
英文摘要 | The organic SOG, of Hybird-Organic-Siloxane-Polymer (HOSP), has been highly evaluated for ULSI applications because it owns a very low dielectric constant (K) of about 2.5. This material also known as Methyl-Hybrido-Silsesquioxane (MHSQ) also has the advantages of good gap filling, low stress and comparable enough strength etc. HOSP however faces an issues of being degraded by photoresist-removing ambient, a negative phenomenon also commonly occurring in other. In this study, we apply ammonia-plasma pre-treatment to prevent HOSP films from photoresist-stripping damage (i.e. O2) plasma and chemical wet stripping). It is found that the leakage current of NH3 plasma-treated HOSP films is decreased significantly and the dielectric constant is maintained at a low k value after photoresist stripping. The fruitful outcome results from the formation of a thin nitride-like surface layer after treating HOSP with NH3 plasma. Material analyses and electric measurements confirm our inference. The result indicates that the thin nitride-like layer can be highly effective in resisting photoresist stripping damage (i.e. O2 plasma and chemical wet stripping) and the HOSP film thus maintains its excellent properties. Therefore, NH3 treatment is a promising technique to enhance the resistance of HOSP films of photoresist stripping process. |
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