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題名 | 高劑量離子佈植及回火後之焦化光阻的去除方法=Wet Process for Stripping Implant-Hardened or Thermal-Hardened Photoresist after High Dose Ion Implantation and Rapid Thermal Anneal |
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作者 | 張連璧; 吳國宏; 龔定華; 藍海; 羅漢華; | 書刊名 | 材料科學與工程 |
卷期 | 32:2 2000.06[民89.06] |
頁次 | 頁47-51 |
分類號 | 448.57 |
關鍵詞 | 高劑量離子佈植; 光阻剝除; 焦化; 回火; 濕式去光阻法; Implant-hardened photoresist; Thermal-hardened photoresist; Wet process; Photoresist stripping; |
語文 | 中文(Chinese) |
中文摘要 | 一般而言,經過高劑量的離子佈植後,光阻焦化以致於除不易;更槽的是,當光阻去除不完全而又逕行實施回火程序時,光阻將進一步嚴重焦化,更難以將其自晶片表面剝離。鑑於以往去光阻法之不完全,本文提出一種包括以piranha etch及丙峒震盪清洗的交互程序,它沒有複雜的配方,也沒有乾式去光阻法中的電漿損害,即可剝除經高離子濃度佈植後燒焦的光阻;甚至被30KeV 5×1015cm-2及50KeV 1×1015cm-2連續兩次錢劑量的佈植,再外加500℃ RTA回火後嚴重焦化的光阻,也能完全去除。 |
英文摘要 | A wet process for stripping photoresist from a semiconductor device during the manufacturing process and after high does ion implantation or rapid thermal anneal is describe. The implant-hardened or thermal-hardened surface of the photoresist is first stripped by pranha etch solution at a higher tempaeature (100~130℃). Then, the semiconductor wafer is cleaned by acetone solution to completely remove remaining contaiminant and photoresist residuals. This two-step wet process can effectively strip the post implant photoresist so that it ensures the cleanliness of the wafer for the succeeding processes. |
本系統之摘要資訊系依該期刊論文摘要之資訊為主。