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題 名 | InAsSb相關材料長波長雷射發展近況=The Status of the Art of InAsSb Related Materials for Long Wavelength Laser Applications |
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作 者 | 汪信全; 蘇炎坤; | 書刊名 | 真空科技 |
卷 期 | 13:2 2000.07[民89.07] |
頁 次 | 頁13-19 |
分類號 | 448.552 |
關鍵詞 | 長波長雷射; 半導體雷射; InAsSb; |
語 文 | 中文(Chinese) |
中文摘要 | 在本報告中我們介紹了近年來InAsSb中波長紅外雷射(2-5um)元件之結構發展,內容除了包括雙異質接面、應力型多層量子井與應力型超晶格等結構外,也包括了新近提出之「在主動區中加入半金屬層」結構,該新結構不僅可以大幅提升光量子效率,尚可降低臨界電流密度,並大幅提升元件之操作溫度,使室溫操作之中波長江外雷射可以提早實現。 |
英文摘要 | In this paper, we introduce the recent development of various structures of InAsSb related materials applied for medium wavelength infrared (MWIR) semiconductor lasers in the wavelength regions of 2~5 micrometers. Semiconductor lasers of double heterojunction, strained-layer multi-quantum well structure and strained-layer superlattic were briefly described. The smart structure including semimetal-layers inserted in the active region was also proposed. This new structure not only increases greatly the optical quantum efficiency, but also decreases the threshold current density. The operating temperature is also enhanced. In this case the MWIR semiconductor lasers in the room-temperature operation will come true earlier in the near future. |
本系統中英文摘要資訊取自各篇刊載內容。