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題名 | Comparison of Photoluminescence Properties between MBE and MOCVD Grown InGaN/GaN Multiple Quantum Well Structures=以分子束磊晶及有機化學氣相沉積生長氮化銦鎵/氮化鎵多重量子井結構螢光特性比較 |
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作者 | 馮世維; 廖啟智; 楊志忠; 林彥勝; 馬廣仁; 張慶安; 吳易座; 賴夆杰; 卓昌正; 李家銘; 綦振瀛; Feng, Shih-wei; Liao, Chi-chih; Yang, C. C.; Lin, Yen-sheng; Ma, Kung-jeng; Chang, Chin-an; Wu, E-tsou; Lai, Fung-jei; Chuo, Chang-cheng; Lee, Chia-ming; Chyi, Jen-inn; |
期刊 | Journal of the Chinese Institute of Electrical Engineering |
出版日期 | 200205 |
卷期 | 9:2 2002.05[民91.05] |
頁次 | 頁103-108 |
分類號 | 448.42 |
語文 | eng |
關鍵詞 | 氮化鎵銦; 氮化鎵多重量子井; 含多銦成分的聚集; 螢光; InGaN/GaN multiple quantum wells; Indium-rich clusters; Photoluminescence; |