頁籤選單縮合
題 名 | 半導體材料鍺之浮帶純化及單結晶拉製 |
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作 者 | 陸志鴻; 莊為仁; | 書刊名 | 材料科學 |
卷 期 | 1:3 民58.09 |
頁 次 | 頁197-205 |
關鍵詞 | 半導體材料鍺; 浮帶純化; 單結晶拉製; |
語 文 | 中文(Chinese) |
中文摘要 | 本研究就鍺半導體之單結晶超高純度材料製造技術加以試驗研究。由美國購得鍺錠三種 (其純度各為7個9及5個9) 鎔解鑄造成為鍺棒,套入於石英套管內,施行浮帶純化 (floating zone refining) ,製成10個9程度之超高純度多結晶鍺棒。然後用單結晶n型鍺產晶種 (seed),其結晶方向為[111],拉製成單結晶鍺棒材料。本研究為國內製造半導體材料之初步嘗試,今後尚須就矽半導體材料之製造技術繼續研究。 |
英文摘要 | The germanium ingot is usually purified in a horizontal graphite boat with the horizontal zone refining equipment. But in our experiment, on account of the construction of the zone melting unit which is designed only for the vertical floating zone melting purpose, the modified vertical zone refining process is used for ultrapurification of the germanium ingot, in order to overcome some troubles happened. The ultra pure undoped polycrystalline germanium bar is then remelted and pulled into a single crystal bar by the Czochralski method with on n-type germanium seed of [111] direction. Since the technique of preparing semiconductor materials is first studied in Taiwan, the report is a preliminary one, and preparation of other semiconductor materials will be further studied hereafter. |
本系統中英文摘要資訊取自各篇刊載內容。