頁籤選單縮合
題 名 | Binding Energy of Hydrogenic Impurity in GaAs-Al戓Ga[fec5] As Quantum Dots with Different Parameter Combinations |
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作 者 | Hsieh,Cheng-ying; | 書刊名 | 德育學報 |
卷 期 | 15 1999.10[民88.10] |
頁 次 | 頁96-115 |
分類號 | 330 |
關鍵詞 | Hydrogenic impurity; Quantum dots; |
語 文 | 英文(English) |
英文摘要 | The low lying state binding energies of hydrogenic impurity located at the center of a GaAs-Al�腐a�詁澡翠s-Al Ga As�詁� multi-layer quantum dot (MLQD) are calculated with different effective mass and dielectric constant parameter combinations. The MLQD consists of a spherical core (GaAs) and a coated spherical shell(Al�腐a�詁澡翠s). The whole dot is embedded inside a bulk material (Al Ga�詁� As). The eigenfunctions of the impurity can be expressed in terms of Whittaker functions and Coulomb wave functions. The ground state and low lying state binding energies are expressed in terms of the dot radius, core radius, and concentration of Al with different parameter combinations. Our result shows the low lying state binding energies is approximate for low concentration of Al and large dot radius. As the conentration of Al increases the difference of binding energy increases. We must consider the difference of the effective mass and dielectric constant between the GaAs and Al�腐a�詁澡翠s region for the small dot radius calculations. Our results also show the effective mass is more important than dielectric constant for low lying state binding energy. |
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