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題 名 | Reduction of Ultra-pure Water Usage in Wafer Rinsing Process via Sequential Compensatory Strategies=以分段互補策略達成晶圓洗滌程序之超純水使用減量 |
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作 者 | 呂世源; 湯慧秀; 陳文章; 劉大佼; | 書刊名 | Journal of the Chinese Institute of Chemical Engineers |
卷 期 | 32:2 2001.03[民90.03] |
頁 次 | 頁117-124 |
分類號 | 448.552 |
關鍵詞 | 晶圓; 洗滌程序; 超純水; Reduction; Ultra-pure water; Wafer rinsing; Semi-conductor; |
語 文 | 英文(English) |
中文摘要 | 本文發展出對於溢流漕晶圓洗滌程序之分段互補策略,可達成大幅的超純水使用減量。主要想法乃在顧分段改變兩入漕洗滌水流之方向或相對水量,以便將於首段洗滌時段中因流場特性所形成的停滯區,以最有效的方法洗除。吾人探討溝式及噴嘴式兩種洗滌。對於溝式洗滌,經由適當首段洗滌時間後之旋轉晶圓45°,可達洗滌時間縮短最大至46%。在相同洗滌水流量下,噴嘴式洗滌較溝式洗滌更有效率。兩者相較,噴嘴式洗滌可較溝式洗滌快6倍。對於噴嘴式洗滌,經由在適當首段洗滌後對調兩不相同流量之入漕洗滌水流流量,可達成洗滌效率19%之提昇。 |
英文摘要 | Sequential compensatory strategies are developed for the overflow tank wafer rinsing process, which can result in a substantial reduction in ultra-pure water usage. The basic idea is to sequentially change the direction or relative flow rate of the two incoming rinsing water streams so that the flow filed induced dead zone, formed during the first rinsing period, can be most effectively rinsed. Both slot and nozzle rinsing are investigated. For the slot rinsing, a maximum reduction of 46% in rinsing time can be achieved by rotating the wafer (equivalent to rotation of the two head-on incoming rising water streams) by 45° after a suitably set first rinsing period has elapsed. The nozzle rinsing, under the same rinsing flow rate, is found to be much more effective than the slot rinsing. A six-fold reduction in rinsing time can be achieved. The efficiency of nozzle rinsing can be improved as much as 19% by switching the unequal flow rate of the two head-on rinsing streams after a suitably set first rinsing period has elapsed. |
本系統中英文摘要資訊取自各篇刊載內容。