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題名 | Parallel Computation of Space-Dependent Boltzmann Transport Equation for Gate Current in Mosfet's=平行計算空間相關之波茲曼方程式並運用於Mosfet之閘極電流 |
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作者 | 林泓均; 許源卿; Lin, Hongchin; Sheu, Yuang-ching; |
期刊 | 興大工程學刊 |
出版日期 | 19991200 |
卷期 | 10:3 1999.12[民88.12] |
頁次 | 頁57-71 |
分類號 | 448.5 |
語文 | eng |
關鍵詞 | 多指令多資料; 熱電子; 閘極電流; 波茲曼方程式; 深次微米; MIMD; Hot-electron; Gate current; BTE; Deep-submicron; |
中文摘要 | 一套運用多指令多資料之元件模擬器來計算 MOSFET 中熱電子所產生之閘極電流 已發展出來,此模擬器使用改良收斂性的數值方法解波茲曼方程式,並比較單一與多處理器 之執行效率。經評估證明其執行速度幾乎正比於處理器數目,這表示處理器間資料交換與其 他非計算時間非常少。總之,此一新方法適合於平行計算深次微米或更小之元件以大幅降低 執行時間。 |
英文摘要 | A new parallel device simulator using multiple instruction, multiple data (MIMD) to calculate hot-electron induced gate current in MOSFET's by solving the space-dependent Boltzmann Transport Equation (BTE) with an improved discretization technique for better convergence characteristics has been developed. A performance comparison between a single processor and multiple processors is also presented. It was proved that the computation speed was nearly proportional to the number of processors, which means the time for data communication between processors or other miscellaneous actions is quite little. In summary, this new space-dependent BTE solver is appropriate for significantly reducing the execution time for parallel deep-submicron or beyond device simulations. |
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