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題 名 | Influence of Excess Bismuth Contents on the Ferroelectric Properties of Fatigue-Free Strontium Bismuth Tantalate Thin-Films=過量鉍含量對非疲勞鍶鉍鉭氧化物薄膜強介電特性之影響 |
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作 者 | 呂宗昕; 方步寬; | 書刊名 | 國立臺灣大學工程學刊 |
卷 期 | 76 1999.06[民88.06] |
頁 次 | 頁119-127 |
分類號 | 460.02 |
關鍵詞 | 強介電; 薄膜; 疲勞; 鍶-鉍-鉭氧化物; Ferrolectric; Thin films; Fatigue; Strontium-bismuch-tantalate oxide; |
語 文 | 英文(English) |
中文摘要 | 本研究探討SrBi2Ta2O9薄膜中添加過量鉍含量後之相生成、顯微結構 及強介電特性。本論文利用有機金屬溶液以旋鍍法製備薄膜。在750°C熱處理 後,SrBi2Ta2O9單相生成。當加熱溫度超過850°C時,製備之薄膜中產生第二相。 此第二相被證實因薄膜與基板中擴散出的鈦成分產生的界面反應所生成。增加鉍 含量於薄膜中後,顯著增加薄膜之殘留極化率及降低矯頑電場。當以化學計量溶 液製備薄膜時,於105扭轉週期以上時,開始產生疲勞現象;但當添加過量20 莫耳比鉍含量於溶液後,至5 ’ 108扭轉週期仍有良好抗疲勞特性。所製備薄膜 之強介電性明顯決定於薄膜中之鉍含量。 |
英文摘要 | The phase formation, microstructure, and ferroelectric properties of SrBi2Ta2O9 films with excess bismuth contents were investigated. The thin films were prepared via a spin-coating process using metalorganic solution. After heating at 750°C, pure SrBi2Ta2O9 phase was formed. However, heating the coated films at temperatures higher than 850°C resulted in the formation of secondary phases. The production of secondary phases was confirmed to be caused by the interaction between films and titanium that diffused from substrates. Adding excess amounts of bismuth significantly increased the remanent polarization and reduced the coercive field of the prepared films. For the films prepared from the stoichiometric solution, the fatigue behavior occurred after subjected to 105 switching cycles; however, the films with 20 mol% excess bismuth exhibited excellent endurance up to 5 ’ 108 cycles. The ferroelectric properties of the prepared films significantly depended on the bismuth contents in the prepared films. |
本系統中英文摘要資訊取自各篇刊載內容。