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題 名 | Design and Fabrication of a Strain-Type Scanning Probe for Atomic Force Microscopy=應變式掃瞄探針之設計與製作 |
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作 者 | 鄭博倫; 李政璋; 徐文祥; | 書刊名 | 中國機械工程學刊 |
卷 期 | 20:1 1999.02[民88.02] |
頁 次 | 頁1-9 |
分類號 | 471.7 |
關鍵詞 | 應變式掃瞄探針; 原子力探測計; Strain-type atomic force microscopy; Strain-gauge; Sensing tip; Wheatstone bridge; Polysilicon resistor; Back etching; |
語 文 | 英文(English) |
中文摘要 | 原子力探測計常用來量測試片表面輪廓,它在工程上應用非常廣泛,例如微力量 的讀取,量測表面輪廓及快速資料存取等應用。本篇提出一種新的方法來製作應變式原子力 探測計,其不同與其老以光學、壓電及電容為生的原子力探測計。除了懸臂樑上的探針外, 加上一個惠司同電橋的應變規。此設計的探針是在懸臂樑的下端,而應變規設計在懸臂樑上 端。 首先我們分析應變與懸臂樑撓度的關係,且使用了有限元素法加以驗證。並且在電阻設計上 考慮了靈敏度的分析並且利用惠司同電橋以補償溫度效應。最後獲得懸臂樑的撓度與輸出電 座的數值關係,這個關係可做為設計結構尺寸的基本根據。 在製程部份,結構主體以 2 μ m 厚的 Sirich 的氮化矽為主,包括了 200 μ× 40 μ m 的懸臂樑及 5 μ m 長的探針,並以複晶矽作為電橋的應變規。其中氮化矽做為背後蝕刻時 保護正面應變規的材料,獲得很好的隔離效果。所製作出的探針尖端尺寸約為 36 nm。在電 阻變化及電壓輸出的測試結果方面,顯示出與模擬結果相吻合。 |
英文摘要 | Atomic force microscopy (AFM) is a popular device for inspecting topography of the sample surface. Here we propose a novel process to fabricate a strain-type scanning probe for atomic force microscopy, which is different from other scanning probe in AFM, like the optical, tunneling, and capacitive type. It incorporates strain gauge and Wheatstone bridge circuit into the cantilever with a sensing tip. In this design, the tip is fabricated on the bottom of the cantilever and the gauge circuit is fabricated on the top of the cantilever. First the analytical expressions of the strain and the deflection of the cantilever beam are derived and verified by the finite element method. We also perform sensitivity analysis in the resistance design. Then the gauge circuit using Wheatstone bridge is analyzed to compensate temperature effect. Finally the relation of the deflection of the cantilever beam and output voltage is obtained. In the fabrication process, the polysilicon acts as the resistor, and a 5 μ m tip is made. The 2 μ m thick Si-rich nitride forms the main structure including the 200 μ m × 40 μ m cantilever beam, which is fabricated by tching the silicon from the back side of the wafer.In the back etching process, the thinner Si �� N �� is shown to be able to protect the strain gauge on the front side. The size of the pyramid apex is about 36nm. The testing results on resistance change and output voltage show good agreement with simulation results. |
本系統中英文摘要資訊取自各篇刊載內容。