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題 名 | 應用光調制反射技術研究砷化鎵、二硒化鉬、矽及二化釕半導體之特性=Mircrocomputer-Controlled Measurements of Photoreflectance Spectra of Semiconductors |
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作 者 | 陳自雄; | 書刊名 | 光武學報 |
卷 期 | 23 1998.11[民87.11] |
頁 次 | 頁41-70 |
分類號 | 448.552 |
關鍵詞 | 光調制反射; 半導體材料; PR; Photoreflectance; |
語 文 | 中文(Chinese) |
中文摘要 | 電子工業是近年來進步最神速的科技,而推動近代電子科技,則有賴半導體技術 的研究發展。本文使用一套可靠性高,由微電腦控制採用自動化量測的光調制反射(Photo reflectance,簡稱PR)系統,並劉用電解液電場調制反射(Electrolyte Electro reflectance,簡稱 EER)系統,在室溫(T=300K)下,研究四種半導體砷化鎵(GaAs)、二硒化鋇(MoSe )、矽(Si) 及二硫化釕(RuS )之特性,並鑑定其品質。 從PR與EER量測,我們觀察結果發現,PR量測調制用的雷射光強度,不影響光線形, 但振幅隨雷射光強度漸增,且PR光譜振幅,隨半導體摻雜載子濃度增高而變大。PR與EER 量測結果相位差180°。 從量測情形及結果分析,發現半導體有幾個特性,用分子束磊晶技術成長的砷化鎵,光 譜譜線寬度較窄,反觀摻雜雜質的砷化鎵,光譜譜線寬度較寬。在研究的半導體中,二硒化 鋇與矽必須直流偏壓,造成能帶彎曲,方可測得PR光譜,二硫化釕間接接躍遷能量1.38eV, 直接躍遷能量有七處,分別為2.35,2.68,2.87,3.02,3.43,4.12,4.85eV。 |
英文摘要 | A micrcomputer controlled Photoreflectance system has been set up. The Study of the modulated opticalproperties of four different kinds of semiconducting materials; GaAs, MoSe2, Si, RuS2; are carried out by photoreflectance (PR) and electrolyteelectroreflectance (EER) techniques. There is a 180°phase difference between PRand EER spectra. The amplitude of PR spectrum increases, with the intensity of laser beam, while the line shape remains similar. The amplitude of PR spectrum also increases with the dopping concentration of somiconductor. Comparing the Eo feature of various GaAssamples, the one grown by MBE on an n+GaAssubstrate shaws narrower structure. The EER spectrum of RuS2 is measured in the energyrang of 1.9 to 5.1 eV. It shows sharp structures in the vicinity of inter band transition. Transition energies are determined accurately, a possible energy band structure is then constructed. |
本系統中英文摘要資訊取自各篇刊載內容。