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| 題 名 | Fabrication of Nanometer Scale Oxide Structures on Silicon Terraces by Atomic Force Microscope |
|---|---|
| 作 者 | Wang,J. B.; Lai,M. Y.; Wang,Y. L.; | 書刊名 | Chinese Journal of Physics |
| 卷 期 | 36:4 1998.08[民87.08] |
| 頁 次 | 頁642-649 |
| 分類號 | 337.97 |
| 關鍵詞 | 原子顯微鏡; |
| 語 文 | 英文(English) |
| 英文摘要 | Nanometer scale oxide structures using an atomic force microscope that has been modified to enable the application of a bias voltage to its scanning tip. Paramenters affecting the width and height of an oxide line were examined systematically. Surface flatness, tip sharpness, bias potential, and scanning speed were found to play important roles in this lithographic process. By optimizing these parameters, an average line width as small as 12 nm has been achieved on specially prepared Si (111) substrates will large atomic terraces. |
本系統中英文摘要資訊取自各篇刊載內容。