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題 名 | Alloy Fluctuations in Si[fec5] Ge戓/Si Quantum Wells=矽化鍺與矽量子井之合金位能起伏現象 |
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作 者 | 陳永方; 朱立寰; 潘善中; 剡永聖; 張毅敏; 張鼎張; 張俊彥; | 書刊名 | Proceedings of the National Science Council : Part A, Physical Science and Engineering |
卷 期 | 22:4 1998.07[民87.07] |
頁 次 | 頁439-446 |
分類號 | 448.5 |
關鍵詞 | 矽化鍺; 矽量子井; 合金位能起伏現象; Si[fec5] Ge戓/Si quantum wells; Alloy potential fluctuations; |
語 文 | 英文(English) |
中文摘要 | 本研究報告一些在矽化緒與矽量子井內的有趣現象。光螢光能量與強度表現出不 尋常的溫度變化。當溫度增加時.能量先增加後減小;光強度展出類非晶半導體之特性;同時隨 激發光強度之增加,光螢光能量會有藍位移現象。持續性光電導可以明顯的觀測到,光電導 之衰退符合扭曲指數函數之描述,而光電導之建立遵循-拋物函數。第一階的蹤向聲子頻譜 呈現不對稱變寬之行為。所有這些觀測到的現象,都能用合金成分的起伏來解釋。因此我們 的結果建立了矽化鍺薄膜存在有合金成分的起伏,同時提供合金位能起伏如何影響了材料特 性的證據。 |
英文摘要 | We report several interesting observations in the study of the optical properties of strained Si□Ge□/Si quantum wells. Both the photoluminescence energy and intensity showed anomalous temperature behavior: The energy first increased, and then decreased with increasing temperature; the intensity showed a temperature dependence similar to that of amorphous semiconductors and disordered superlattices; and blue shifting of the photoluminescence energy with increasing excitation intensity was observed. Persistent photoconductivity was detected, and the kinetics of its decay and transient buildup followed a stretched-exponential function and a parabolic time dependence, respectively. The first-order longitudinal-optical Si-like phonon mode showed asymmetric broadening behavior. All these observations can he explained by alloy potential fluctuations in a consistent way. Thus, our results firmly establish the existence of compositional fluctuations in Si□Ge□ epilayers and provide evidence showing that alloy potential fluctuations can greatly influence the properties of materials. |
本系統中英文摘要資訊取自各篇刊載內容。