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題 名 | The Study of Pulsed Au-Plating Deposited Heat Spreader for Semiconductor Lasers=以脈衝電解鍍金法製作半導體雷射散熱器之研究 |
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作 者 | 吳志宏; | 書刊名 | 材料科學 |
卷 期 | 30:3 1998.09[民87.09] |
頁 次 | 頁209-217 |
分類號 | 448.552 |
關鍵詞 | 脈衝電解鍍金法; 半導體雷射; 散熱器; 熱阻抗; Pulsed au-plating; Semiconductor laser; Heat spreader; Thermal resistance; |
語 文 | 英文(English) |
中文摘要 | 本文研究以脈衝電解鍍金法製作厚金散熱器對具磊晶層朝上包裝的砷化銦鎵/砷化 鎵量子井雷射發光特性的影響。由理論計算模擬與實驗結果顯示,當雷射元件熱阻抗降低時 半導體雷射的最大可用連續波發光功率及線性發光功率特性區域可獲得鉅大的改善。並且從 實驗中得知鍍金圖案的光阻厚度與脈衝電鍍條件對所生成熱器的厚度具有決定性的影響。另 一方面,經由量測因元件溫昇造成雷射發光波長漂移所需的補償溫度,吾人可以得知雷射二 極體的熱阻抗。研究結果指出此熱阻抗與所生成熱器み金的厚度息息相關;當金的厚度小8 微米時,熱阻抗隨著散熱器厚度的增加而呈線性降低,但是當金的厚度大於8微米後,熱阻 抗降低的趨勢即逐漸減緩。而實驗結果也證實雷射二極體的熱阻抗對元件在高溫及連續波運 作時影響甚鉅,但在低脈衝運作條件下並無顯著的影響。 |
英文摘要 | Pulsed Au-plating technique is adopted to deposit thick Au as heat spreader of epi-side up bonded InGaAs/GaAs quantum well lasers. Theoretical and experimental results indicate that the maximum available CW lasing power and linear region of output power versus input current (P-I) characteristics of diode laasers can be tremendously improved by decreasing device thermal resistance (R□). In addition, photo-resist thickness and plating conditions are found important in determining the heat spreader thickness. By measuring the amount of temperature required to compensate the grating-resolved lasing mode movements. R□ of diode laser is determined and greatly dependent on the heat spreader thickness t□. When t□ is smaller than 8 μm, R□ is decreased linearly with the increase of t□ while becomes relatively unchanged as t□ is larger than 8 μm. Moreover, significant effects of R□ on lasing slope efficiency is observed when laser is operated at high temperature and CW conditions. However, no pronounced dependence is obtained in the case of low duty-cycle operation. |
本系統中英文摘要資訊取自各篇刊載內容。