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題 名 | 以液相沈積法成長二氧化矽之性質探討及其在MIS太陽電池之應用=The Properties of Silicon Dioxide Grown by Liquid Phase Deposition (LPD) Method and Its Application in MIS Solar Cells |
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作 者 | 張偉智; 王納富; 黃建榮; 洪茂峰; 王永和; | 書刊名 | 材料科學 |
卷 期 | 30:3 1998.09[民87.09] |
頁 次 | 頁165-177 |
分類號 | 468.1 |
關鍵詞 | 隔絕能力; 低溫成長; 電容-電壓曲線; 成長機制; MIS太陽電池; 載子跳躍理論; 位障高度; 理想因數; Isolating ability; Low temperature growth; Capacitance-voltage curve; Growth mechanism; MIS solar cells; Trap-assisted hopping conduction mechanism; Barrier height; Ideality factor; |
語 文 | 中文(Chinese) |
中文摘要 | 在現今積體電路上,二氧化矽的成長大部份是用高溫爐氧化法或化學汽相沈積法, 這些方法均是在溫度高達幾百度之環境下進行,對元件其他不耐高溫的部份有其潛在缺點, 因此一個低溫成長系統之需求便顯得更加急切。本論文利用一室溫成長之系統(LPD)來成長 二氧化矽,其優點為設備簡單,低溫成長且無熱應力產生,其品質足以做元件上應用。在探 討其性質上,吾人做了不同的物性及化性上的測試,包括歐傑電子光譜(AES),穿透式電子 顯微技術(TEM),富利葉轉換紅外線光譜(FTIR),X射線光電子光譜(XPS),P-蝕刻速率(P-Etch Rate)等,電性方面用高頻電容-電壓曲線來分析介面之品質,另外也討論了其成長機制, 以便對此成長方法有更深一層的瞭解。 在應用上,吾人利用LPD法成長薄氧化層並製作MIS結構之太陽電池(LPD-MIS Solar Cell)。吾人發現一奇特的現象,即在照光時,縱使氧化層厚度厚到100□依然有太陽電池特 性產生。經由實驗發現,沈積過程中自然摻入之F離子為造成此特性的原因。F離子在載子 傳輸過程是當作能階以幫助在氧化層中的穿透效應,吾人利用載子為主之跳躍傳導理論 (Trap-Assisted Hopping Conduction Mechanism)來解釋此一現象。而更明顯的是它能提昇位障 高度,降低理想因數值,使得LPD-MIS太陽電池能和以往MIS太陽電池一樣具有輸出特性。 吾人做了不同測試來瞭解F離子的存在及影響,包括AES、C-V等。以上這些結果可以幫 助吾人瞭解及製作LPD氧化層的相關元件。 |
英文摘要 | Thermal oxidation and chemical vapor deposition method are mostly used to grow a silicon oxide. These depositions are carried out at a temperature of hundreds of degrees. That is detrimental to the devices which can not stand high temperature. Therefore, there is an urgent need of low temperature growing system. In this paper, we use a room temperature processing system (LPD) to grow silicon dioxide. The advantages are inexpensive equipment, low temperature growth, and o thermal stress. The quality is good enough to be used in the IC devices. To investigate the properties of silicon dioxide, we have done different physical and chemical tests including Auger Electron Spectroscopy (AES), Transmission Electron Microscopy (TEM), Fourier Transform Infrared Spectroscopy (FTIR), X-ray Photoelectron Spectroscopy (XPS), and P-etch rate. We used the high frequency capacitance-voltage curve to study the interface properties. Moreover, we also discuss the growth mechanism in order to obtain more understand of LPD method. In the application, MIS solar cells with an I-layer fabricated by LPD method, denoted as LPD- MIS solar cells, have been studied. The abnormal phenomenon in the illuminated I-V characteristics for oxide thickness ranging from 50 to 150 □ is observed. The fluorine contained in LPD-oxide is the main cause of this behavior which acts as the impurity level to help traveling through oxide. A trap-assisted hopping conduction mechanism is used to explain such conduction mechanism. Barrier height enhancement and diode quality factor lowering caused by fluorine lead LPD-MIS solar cells to have the same characteristics as traditional MIS solar cells. The existence and effect of fluorine contents are clarified by various tests. The results provide a guideline for the fabrication of LPD-siO2 related devices. |
本系統中英文摘要資訊取自各篇刊載內容。