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題名 | Two-Dimensional Mixed-Level Device and Circuit Simulation Using HSPICE=用HSPICE研究二維元件與電路之混階模擬 |
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作者 | 蔡曜聰; 鄧欽霖; | 書刊名 | Proceedings of the National Science Council : Part A, Physical Science and Engineering |
卷期 | 22:2 1998.03[民87.03] |
頁次 | 頁290-296 |
分類號 | 448.532 |
關鍵詞 | 等效電路模型法; HSPICE; Device simulation; SOS; MOSFET; |
語文 | 英文(English) |
中文摘要 | 本篇文章研究以等效電路模型法在HSPICE上作二維元件和電路的混階模擬。所 謂等效電路模型法,就是將傳統用來描述元件載子傳輪的模型轉換成等效電路模型。如此 一來,元件模擬變成了電路模擬,不但可用電路模擬器來做元件模擬而且可以和一般的電 路結合,形成混階模擬。首先,我們先推導二維的等效電路模型,然後裝入HSPICE中,並 以二極體切換電路為例子作混階模擬,探討因少數載子儲存效應所造成的延遲時間。接下 來是SOS(semiconductor-oxide-semiconductor)元件的模擬,並將此技術應用於次微米金 氧半結構之元件上。此方法有助於我們更深入了解元件或製程參數對電路特性的影響,以 及元件在實際電路所造成的動態邊界條件下的特性變化。 |
英文摘要 | This paper presents an equivalent circuit approach to 2D numerical mixed-level device and circuit simulation using HSPICE. In this paper, Poisson's and continuity equations are formulated into a subcircuit format suitable for general circuit simulators such as HSPICE. In other words. the device is converted to an equivalent circuit model, which chances the device simulation problem into a circuit analysis problem and allows simultaneous solution of an electrical network containing both nonlinear circuit elements and numerical models of devices. Different from conventional approaches, our approach is conceptually simple. and the extension of this model to three-dimensional device simulation is straightforward. The utility of this approach in mixed-level simulation is demonstrated through transient analysis of diode switching, circuit, SOS (semiconductor-oxide- semiconductor) test circuit and submicron MOSFET simulation using HSPICE. |
本系統之摘要資訊系依該期刊論文摘要之資訊為主。