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題名 | Emi Effects on Mosfets and Cmos Inverters and Their Predictions=MOSFETs及CMOS反相閘的電磁干擾效應與其預估方法 |
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作者姓名(中文) | 劉政光; 楊吳德; 周宗平; 賴富順; 陳君明; | 書刊名 | 中國工程學刊 |
卷期 | 21:2 1998.03[民87.03] |
頁次 | 頁129-138 |
分類號 | 448.5 |
關鍵詞 | 電磁干擾; 反相閘; 基體效應; 電磁相容; EMI; MOSFET; Inverter; Substrate effect; EMC; |
語文 | 英文(English) |
中文摘要 | 本文實驗探討經由基體,閘輸入,及電源端耦合進入MOS元件的電磁干擾效應。研 究nMOSFET,pMOSFET及CMOS反相閘,因電磁干擾效應而產生的功能劣化情形。我們考慮了其 偏壓,射頻功率,與射頻頻率的影響。更進一步提出了元件電磁干擾感受度的預估方法。 預估的結果與實驗相互吻合。 |
英文摘要 | The effects of electromagnetic interference (EMI) coupled through the substrate, gate input, and power supply into MOS devices are studied experimentally. This research also investigated the performance degradation of nMOSFET, pMOSFET, and CMOS inverters due to interference, Their bias dependence, RF power, and frequency dependence are taken into account. Furthermore, empirical models are proposed to predict EMI susceptibility. Predicted results compare well with experimental data. |
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