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題 名 | FTIR量測比較氧化生長法之二氧化矽薄膜矽-氧-矽鍵結均勻性定性分析SiO[feaf]/Si界面層結構=FTIR Qualitative Analysis of the SiO[feaf]/Si Interface Width in Comparision with Si-O-Si Bonding Configuration of Thermal Oxide Film |
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作 者 | 蔡震寰; 張毅; 陳培中; 廖志雄; 王弘宗; 曾昆福; | 書刊名 | 中正嶺學報 |
卷 期 | 26:1 1997.07[民86.07] |
頁 次 | 頁47-58 |
分類號 | 468 |
關鍵詞 | 乾氧及濕氧性二氧化矽; 傅立葉轉換紅外光譜分析儀; 矽-氧-矽鍵結; Wet and dry oxide; Fourier transformed infrared spectrometry; Si-O-Si bonding; |
語 文 | 中文(Chinese) |
中文摘要 | 本文主要利用傅立葉轉換紅外光譜分析儀(FTIR)量測1100℃退火前後氧化生長 法之乾、濕氧性二氧化矽薄膜,計算頻譜中1090cm 附近對應矽-氧-矽鍵結(Si-O-Si) Asymmetric Stretching吸收波谷的FWHM值,並比較兩者退火處理後SiO /Si界面矽原子 的變化情形,定性的分析出界面層厚度的差異性。藉由FTIR量測二氧化矽薄膜層所得能譜 可知,退火前濕氧性整體的以及經HF(10%)腐蝕剩餘各不同厚度的鍵結皆比乾氧性分布 不一致而顯得不均勻,雖然兩者皆無明顯的氫參與鍵結之訊息,且退火處理後濕氧性有明顯 的朝一致性而更加均勻化發展的趨向,反之乾氧性則無,可知濕氧性二氧化矽薄膜結構較不 穩定所以缺陷出現的比例遠大於乾氧;而同時SiO /Si在界面濕氧性有可量測到的矽原子 稀釋聚集現象,乾氧性則難以量測到。 |
英文摘要 | This paper is to study the qualitative analysis of SiO2/Si interface width in comparison with the difference of Si-O-Si bonding configurations between wet and dry oxide grown on (100) silicon before and after 1100℃ annealing, which is examined by Fourier transformed infrared spectrometry (FTIR). The absorption valley and full-width-at-half-maximum (FWHM) of the Si-O-Si stretching mode determine the quantities of the Si-O-Si bonding configurations in the oxide when different HF- etched oxide thickness are measured by FTIR. It is found that the distribution of bonding configurations in the wet oxide film become more uniform after furnace annealing at 1100℃. In the same time, the nature of perception, diffusion, and aggregation of Si atoms in the neighborhood of SiO /Si interface can also be found during annealing duration. Contradictorily, those properties are not existing in the dry oxide because its bonding configuration is much more stable than the wet oxide. |
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