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題名 | Anomalous Temperature Dependence of the InAlAs Photoluminescence Spectrum=砷化銦鋁之變溫光致發光譜行為研究 |
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作 者 | 江國成; | 書刊名 | 筧橋學報 |
卷期 | 4 1997.09[民86.09] |
頁次 | 頁49-60 |
分類號 | 336.5 |
關鍵詞 | 砷化銦鋁; 光致發光; 能隙; 特性溫度; InAlAs; Photoluminescence; Bandgap; Characteristic temperature; |
語文 | 英文(English) |
中文摘要 | 本文研究了砷化銦鋁半導體晶膜的發光致發行為。在不同的溫區內,發光峰譜顯現 異於常態的偏移,峰譜寬度亦有相對應的變化,輸出之光強度卻依隨溫度增高而單向降低。 在固定溫度下,調變激發密度之光強度隨之增強,但是發光峰譜的半高寬度並未增減。對這 些不尋常之現象,在文中討論了可能的激子轉換機理,並初步探討其遷移的溫度範圍。 |
英文摘要 | The photoluminescence (PL) spectra for InAlAs/InP have been investigated in detail. The anomalous temperature dependence of the PL spectrum of InAlAs is observed. Similar to the peak shifting behavior, the temperature dependence of luminescence linewidth shows the corresponding evolution (the so-called inverted S shape). The main peak does not show any energy shift with the excitation power varying over three orders magnitude. The integrated PL intensity as a function of temperature are calculated with discontinuity temperature at 60 K. A characteristic temperature (T �� ) corresponding to the energy depth of the excition localization is calculated. A possible explanations for the anomalous shifting is also discussed. |
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