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題名 | 摻雜鑭的鈦酸鋇於不同燒結製程下之電性特性=Electrical Property of Lanthanum Doped Barium Titanate under Different Sintering Process |
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作者姓名(中文) | 劉如真; 林和龍; | 書刊名 | 大同學報 |
卷期 | 26 1996.11[民85.11] |
頁次 | 頁365-371+428 |
分類號 | 440.33 |
關鍵詞 | 鈦酸鋇; 燒結製程; 電性特性; 施體半導體化元素; |
語文 | 中文(Chinese) |
中文摘要 | 鈦酸鋇添加微量施體半導體化元素後具有正溫度係數(PTCR)電阻特性。施體添 加量在適當範圍內,有最低的室溫電阻,超過此適當含量不僅室溫電阻上升,晶粒大小也隨 之變細。本研究以 Ba �� La �X Ti1.01 O �鬲陞D,其中 0.05at% ≦ X ≦ 3.00at%,在不 同燒結製程條件下進行微觀組織、結晶構造及各電性量測,結果顯示 V ���f " 在晶粒、晶 界間的分佈與微觀組織、電性變化有很密切的關連性。 |
英文摘要 | Donor-doped barium titanate exhibits a positive temperature coefficient of resistivity. The room temperature resistivity of this material reaches a minimum as the donor concentration is within appropriate range. When the dopant concentration exceeds a certain characteristic value, room temperature resistivity of material will increase and the grain size will also decrease. In this study, we used lanthanum as dopant, and the basic composition is Ba �� La �� Ti1.01 O ��, where 0.05at% < X < 3.00at%. The microstructure, lattice constant and electrical properties of La doped barium titanate which processed under different sintering conditions were examined. The results show that the evolutions of microstructure and variation of electrical property are closely realted to the distribution of barium vacancy between grain and grain boundary. |
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